RJK5018DPK Renesas Electronics Corporation., RJK5018DPK Datasheet - Page 2

• Manufacturer Part Number: RJK5018DPK
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK5018DPK
Electrical Characteristics
Notes: 4. Pulse test
Rev.1.00 May 11, 2006 page 2 of 3
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Item
Symbol
V
R
V
Coss
(BR)DSS
Crss
Ciss
t
t
Qgs
Qgd
I
I
GS(off)
V
DS(on)
Qg
d(on)
d(off)
DSS
GSS
t
t
t
DF
rr
r
f
Min
500
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.130
4100
0.92
Typ
420
144
104
430
50
50
99
93
21
46
—
—
—
—
0.155
Max
±0.1
1.55
4.5
—
—
—
—
—
—
—
—
—
—
—
—
1
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
V
A
A
V
I
V
V
I
V
V
f = 1 MHz
I
V
R
Rg = 10
V
V
I
I
I
di
D
D
D
D
F
F
DS
GS
DS
DS
GS
GS
DD
GS
L
F
= 35 A, V
= 35 A, V
= 10 mA, V
= 17.5 A, V
= 17.5 A
= 35 A
/dt = 100 A/ s
= 14.3
= 500 V, V
= 10 V, I
= 25 V
= 30 V, V
= 0
= 10 V
= 400 V
= 10 V
Test conditions
GS
GS
D
GS
GS
= 1 mA
= 0
= 0
GS
DS
= 0
= 10 V
= 0
= 0
Note4
(Ta = 25°C)
Note4