RJK5020DPK Renesas Electronics Corporation., RJK5020DPK Datasheet

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RJK5020DPK

Manufacturer Part Number
RJK5020DPK
Description
Silicon N Channel Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RJK5020DPK
Manufacturer:
RENESAS
Quantity:
10 000
Part Number:
RJK5020DPK-00-T0
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
RJK5020DPK01-E
Manufacturer:
ST
Quantity:
5 000
RJK5020DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
Rev.2.00 Dec 19, 2006 page 1 of 6
Low on-resistance
Low leakage current
High speed switching
2. Value at Tc = 25 C
3. STch = 25 C, Tch
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
10 s, duty cycle
Item
150 C
1
1%
2
3
I
I
DR (pulse)
D (pulse)
Symbol
Pch
E
I
AP
V
V
AR
Tstg
Tch
ch-c
I
GSS
I
DSS
DR
Note3
D
Note3
Note2
Note1
Note1
G
D
S
–55 to +150
Ratings
0.625
12.5
500
±30
120
120
200
150
8.6
40
40
1. Gate
2. Drain (Flange)
3. Source
REJ03G1263-0200
Dec 19, 2006
Unit
C/W
mJ
W
V
V
A
A
A
A
A
C
C
(Ta = 25°C)
Rev.2.00

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RJK5020DPK Summary of contents

Page 1

... RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current ...

Page 2

... RJK5020DPK Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...

Page 3

... RJK5020DPK Main Characteristics Power vs. Temperature Derating 400 300 200 100 0 50 100 Case Temperature Typical Output Characteristics 5 Drain to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 0.1 0.05 0.02 0. Drain Current Rev.2.00 Dec 19, 2006 page ...

Page 4

... RJK5020DPK Body-Drain Diode Reverse Recovery Time 1000 500 200 100 100 A / µ Reverse Drain Current Dynamic Input Characteristics 800 100 V DD 600 250 V 400 400 200 V = 400 V DD 250 V 100 V 40 ...

Page 5

... RJK5020DPK Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. 10 Ω Vin 10 V Rev.2.00 Dec 19, 2006 page θ ch – c( (t) • θ ch – 0.625°C/ 25° 100 m Pulse Width ...

Page 6

... RENESAS Code TO-3P SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part No. RJK5020DPK-00-T0 360 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Dec 19, 2006 page Previous Code MASS[Typ.] TO-3P / TO-3PV 5.0g 4.8 ± ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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