RTQ040P02 ROHM Co. Ltd., RTQ040P02 Datasheet

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RTQ040P02

Manufacturer Part Number
RTQ040P02
Description
2.5v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
2.5V Drive Pch MOS FET
RTQ040P02
Silicon P-channel MOS FET
1) Low on-resistance. (60mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
DC-DC converter
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Source current
(Body diode)
∗ Mounted on a ceramic board.
Type
RTQ040P02
Applications
Structure
Features
External dimensions (Unit : mm)
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TR
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
±4.0
1.25
−20
±12
±16
−16
150
100
−1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
TSMT6
(6)
(1)
1pin mark
°C / W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
(6)
Abbreviated symbol : TZ
(5)
(2)
0.95
(1)
(5)
∗2
2.9
1.9
0.4
0.95
(2)
(4)
(3)
Each lead has same dimensions
∗1
(4)
(3)
1.0MAX
0.16
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
0.85
0.7
RTQ040P02
0 ~ 0.1
Rev.B
1/4

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RTQ040P02 Summary of contents

Page 1

... I D ∗1 ± − ∗1 − ∗2 P 1.25 D Tch 150 −55 to +150 Tstg Symbol Limits ∗ Rth(ch-a) 100 RTQ040P02 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) ( 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TZ (5) (4) ∗2 ∗1 (1) Drain (2) Drain (3) Gate ...

Page 2

... V DD ∗ − − = −4.5V 2 ∗ − − = −4.0A 3 Min. Typ. Max. Unit − − −1.2 = −1A RTQ040P02 Conditions =0V DS = −1mA D = −4. − −2. −2.0A D − =3.75Ω =10Ω G Conditions =0V GS Rev.B 2/4 ...

Page 3

... Pulsed (off) 100 (on) 1 0.01 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Switching Characteristics RTQ040P02 1000 V GS Pulsed Ta=125°C Ta=75°C 100 Ta=25°C Ta= −25° 0.1 1 DRAIN CURRENT : −I (A) D Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 10 Ta=125°C Ta=75° ...

Page 4

... D.U. Fig.10 Switching Time Measurement Circuit G(Const) D.U. Fig.12 Gate Charge Measurement Circuit RTQ040P02 Pulse Width V GS 10% 50% 50% 90% 10% 10% 90% 90 d(on) r d(off off Fig.11 Switching Waveforms ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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