RTQ040P02 ROHM Co. Ltd., RTQ040P02 Datasheet - Page 2

• Manufacturer Part Number: RTQ040P02
• Description: 2.5v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
∗Pulsed
Forward voltage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
V
I
I
C
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
SD
oss
iss
rss
r
gd
fs
f
gs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
−0.7
−20
3.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1350
Typ.
Typ.
12.2
210
150
2.6
3.4
35
40
60
15
35
60
30
−
−
−
−
−
−
Max.
Max.
−1.2
−2.0
±10
−1
50
55
85
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
V
S
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
V
R
R
V
V
I
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
GS
= −1mA, V
= −4A, V
= −4A, V
= −2.0A, V
= −2.0A
= −4.0A
= −1A, V
=7.5Ω
=10Ω
= −20V, V
= −10V, I
= −10V, I
= −10V
=±12V, V
=0V
= −4.5V
= −4.5V
−15V
−15 V
Conditions
Conditions
GS
GS
GS
GS
GS
= −4.5V
= −4V
D
D
=0V
DS
GS
= −1mA
= −2.0A
R
R
=0V
= −2.5V
=0V
L
G
=0V
=3.75Ω
=10Ω
RTQ040P02
Rev.B
2/4