SCH1410 Sanyo Semiconductor Corporation, SCH1410 Datasheet

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SCH1410

Manufacturer Part Number
SCH1410
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SCH1410-TL-E
Manufacturer:
SANYO
Quantity:
5 656
Ordering number : EN8984
SCH1410
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KK
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Low ON-resistance.
High-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V GS (off)
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS = 8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =4V
I D =0.5A, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
SCH1410
Conditions
Conditions
2
0.8mm)
82505PE MS IM TA-100787
min
0.4
2.1
20
Ratings
typ
Ratings
145
190
115
3.5
40
25
25
25
18
9
Continued on next page.
--55 to +150
max
150
2.0
8.0
0.8
150
200
1.3
20
10
10
1
No.8984-1/4
Unit
m
m
Unit
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A

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SCH1410 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SCH1410 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... IT10058 Ratings min typ max 2.7 0.6 0.6 0.87 1 =10V OUT G SCH1410 =10V 0 0 0.4 0.8 1.2 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature Unit nC ...

Page 3

... Drain Current =10V Total Gate Charge 1.0 0.8 0.6 0.4 0 100 Ambient Temperature SCH1410 1.0 IT02724 1000 100 ...

Page 4

... Note on usage : Since the SCH1410 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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