SHF-0589 Sirenza Microdevices, SHF-0589 Datasheet

SHF-0589

Manufacturer Part Number

SHF-0589

Description

0.05-3 Ghz, 2 Watt Gaas Hfet

Manufacturer

Sirenza Microdevices

Datasheet

1.SHF-0589.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SHF-0589Z

Manufacturer:

SIRENZA

Quantity:

3 400

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Product Description

Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/

GaAs Heterostructure FET (HFET) housed in a low-cost sur-

face-mount plastic package. The HFET technology improves

breakdown voltage while minimizing Schottky leakage current

resulting in higher PAE and improved linearity.

Output power at 1dB compression is +33.4 dBm when biased

for Class AB operation at 7V,345mA at 1.96 GHz. The +46.5

dBm third order intercept makes it ideal for high dynamic range,

high intercept point requirements. It is well suited for use in

both

infrastructure and subscriber equipment including 3G, cellular,

PCS, fixed wireless, and pager systems.

[1] 100% tested - Insertion gain tested using a 50 ohm contact board (no matching circuitry) during final production test.

[2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test measurements. The test fixture is

an engineering application circuit board. The application circuit was designed for the optimum combination of linearity, P1dB, and VSWR.

[3] Maximum recommended power dissipation is specified to maintain T

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.

Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are

subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not

authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.

303 S. Technology Ct.

Broomfield, CO 80021

S y m b o l

G m a x

P 1 d B

B V

O IP 3

G a in

R th

N F

D S S

C H A N

D Q

D IS S

D S

2 1

G S

G D

analog

D e v ic e C h a ra c te ris tic s

M a xim um A va ila b le G a in

Ins e rtio n G a i n

P o w e r G a in

O utp ut T hird O rd e r Inte rc e p t P o int

O utp ut 1 d B C o m p re s s i o n P o i nt

IS -9 5 C ha nne l P o w e r (-4 5 d B c A C P R )

N o is e F ig ure

S a tura te d D ra in C urre nt

P i nc h-O ff V o lta g e

G a te -S o urc e B re a k d o w n V o lta g e

G a te -D ra i n B re a k d o w n V o lta g e

O p e ra ti ng V o lta g e

O p e ra ti ng C urre nt

P o w e r D i s s ip a tio n

Typical Gain Performance (7V,345mA)

Tra nc o nd uc ta nc e

T he rm a l R e s is ta nc e

Gain

and

[2 ]

digital

Frequency (GHz)

[2 ]

[1 ]

[3 ]

Gmax

wireless

[2 ]

[1 ]

[2 ]

communication

(u n le s s o th e r w is e n o te d )

A p p lic a tio n C irc uit

d ra in-s o urc e

d ra in-s o urc e , q uie s c e nt

Phone: (800) SMI-MMIC

T e s t C o n d itio n s , 2 5 C

junc tio n-to -le a d

G S

G D

<140C at T

D S

= Z

= 4 .8 m A , d ra in o p e n

= 4 .8 m A , V

= V

= 2 .0 V , I

= 7 V , I

= 5 0 O hm s

*, Z

D S P

D Q

= Z

, V

=85C. V

= 3 4 5 m A

D S

G S

= 2 .4 m A

G S

= 0 V

= -0 .2 5 V

= -5 .0 V

SHF-0589

0.05-3 GHz, 2 Watt

GaAs HFET

Applications

•

Analog and Digital Wireless Systems

3G, Cellular, PCS

Fixed Wireless, Pager Systems

* I

< 2.4W is recommended for continuous reliable operation.

F re q u e n c y

0 .9 0 G H z

1 .9 6 G H z

2 .1 4 G H z

0 .9 0 G H z

1 .9 6 G H z

T e s t

Final Shipment Date: 13-June-2008

Last Time Buy Date: 14-Dec-2007

U n its

d B m

C /W

m A

m S

m A

d B

OBSOLETE

3 1 .9

1 4 .1

1 0 .3

-3 .0

M in

8 1 6

5 7 6

4 4

http://www.sirenza.com

OBSOLETE

11 7 6

2 2 .9

4 6 .5

3 3 .4

2 6 .2

T y p

1 7 .4

1 6 .6

1 5 .7

11 .5

7 9 2

-1 .9

-1 7

-2 2

3 .7

2 3

EDS-101242 Rev G

1 5 3 6

1 0 0 8

M a x

1 7 .3

1 2 .7

-1 .0

4 8 0

-1 5

-1 7

8 .0

2 .4

Related parts for SHF-0589

SHF-0589 Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost sur- face-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression is +33.4 dBm when biased for Class AB operation at 7V,345mA at 1 ...

Page 2

... Power Derating Curve Operational (Tj<140C) ABS MAX (Tj<165C) - 110 140 170 Lead Temperature (C) Phone: (800) SMI-MMIC 2 OBSOLETE SHF-0589 2 Watt HFET Symbol Value Unit I 640 4.8 mA GSF I 4.8 ...

Page 3

... Channel OIP3 Power Power (dBm) (dBm) (dBm) [4] [4] 25.7 23.2 45.0 [4] [4] 26.2 23.2 46.5 23.7 [5] 20.5 [5] 46.4 Phone: (800) SMI-MMIC 3 OBSOLETE SHF-0589 2 Watt HFET =345mA, 25 ° ° ° ° ° S11, S22 vs Frequency 1.0 6 GHz 0.5 2.0 5 GHz 4 GHz 6 GHz 5 GHz 3 GHz 4 GHz 3 GHz 2 GHz 2 GHz 0.2 0.5 1.0 2.0 5.0 1 GHz 50 MHz S22 1 GHz ...

Page 4

... The part will be symbolized with the “H5” designator and a dot signifying pin 1 on the top surface of the package. Ground Plane Holes SHF-0x89 Machine Screws Phone: (800) SMI-MMIC 4 OBSOLETE SHF-0589 2 Watt HFET Reel Size Devices/Reel 7" 1000 Part Symbolization Package Dimensions .161 .016 .177 .068 .019 ...

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