SHF-0589 Sirenza Microdevices, SHF-0589 Datasheet - Page 2

• Manufacturer Part Number: SHF-0589
• Description: 0.05-3 Ghz, 2 Watt Gaas Hfet
• Manufacturer: Sirenza Microdevices

Design Considerations and Trade-offs
1. The SHF-0x89 is a depletion mode FET and requires a negative gate voltage. Normal pinchoff variation from part-to-
part precludes the use of a fixed gate voltage for all devices. Active bias circuitry or manual gate bias alignment is
recommended to maintain acceptable performance (RF and thermal).
2. Active bias circuitry is strongly recommended for class A operation (backoff >6dB).
3. For large signal operation (< 6dB backoff) class AB operation is required to maximize the FET’s performance.
Passive gate bias circuitry is generally required to achieve pure class AB performance. This is generally accomplished
using a voltage divider with temperature compensation. Per item 1 above the gate voltage should be aligned for each
device to eliminate the effects of pinchoff process variation.
4. Choose the operating voltage based on the amount of backoff. For large signal operation the drain-source voltage
should be increased to 8V to maximize P1dB. For small signal operation OIP3 may be improved by reducing the voltage
and increasing the current. The recommended application circuit should be re-optimized if the recommended 7V bias
condition is not used. Make sure the quiescent bias condition does not exceed the recommended power dissipation
limit (shown on page 1).
303 S. Technology Ct.
Broomfield, CO 80021
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the bias condition should also
satisfy the following expression:
where:
MTTF @ T
P
P
T
T
R
DC
DC
J
L
TH
= Junction Temperature (°C)
= Lead Temperature (pin 4) (°C)
= I
< (T
= Thermal Resistance (°C/W)
DS
J
* V
- T
J
=150C exceeds 1E7 hours
DS
L
) / R
(W)
TH
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
Absolute Maximum Ratings
-10
Operational (Tj<140C)
ABS MAX (Tj<165C)
Power Derating Curve
Phone: (800) SMI-MMIC
20
Lead Temperature (C)
50
2
Drain Current
Forward Gate Current
Reverse Gate Current
Drain-to-Source Voltage
Gate-to-Source Voltage
RF Input Power
Operating Lead Temperature
Storage Temperature Range
Power Dissipation
Channel Temperature
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
specified in the table on page 1.
voltage and current must not exceed the maximum operating values
80
Not Recommended for New Designs
Parameter
110 140 170
Symbol
SHF-0589 2 Watt HFET
P
T
I
I
V
V
P
I
GSF
GSR
T
T
DS
DISS
stor
DS
GS
IN
L
J
http://www.sirenza.com
-40 to +165
See Graph
See Graph
<-5 or >0
OBSOLETE
Value
640
800
165
4.8
4.8
9.0
EDS-101242 Rev G
Unit
mW
mA
mA
mA
°C
°C
W
°C
V
V