NE52118 Renesas Electronics Corporation., NE52118 Datasheet - Page 2

• Manufacturer Part Number: NE52118
• Description: L To S Band Low Noise Amplifier Npn Gaas Hbt
• Manufacturer: Renesas Electronics Corporation.

RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Emitter to Base Leak Current
Collector to Base Leak Current
Collector to Emitter Leak
Current
DC current gain
Base to Emitter Forward Voltage
Base to Collector Forward
Voltage
Noise Figure
Associated Gain
Out Third-Order Distortion
Intercept Point
Noise Figure
Associated Gain
Collector to Emitter Voltage
Collector Current
Parameter
Parameter
Symbol
Symbol
OIP
V
V
V
I
I
I
h
NF
NF
EBO
CBO
CEO
G
G
I
FBE
FBC
FE
CE
C
a
a
3
Preliminary Data Sheet P14544EJ1V0DS00
V
V
V
V
I
I
V
f = 2 GHz,
Z
V
f = 2 GHz, Z
BE
BC
A
S
EBO
CBO
CEO
CE
CE
CE
= Z
= +25°C)
= 100 A
= 100 A
= 2 V, I
= 2 V, I
= 2 V, I
= 3 V
= 3 V
= 5 V
L
= 50
MIN.
1.5
Test Conditions
C
C
C
S
= 3 mA
= 3 mA,
= 5 mA,
= Z
A
= +25 °C)
L
= 50
TYP.
2.0
3
MIN.
13.5
1.0
0.7
50
TYP.
16.3
0.2
0.2
0.5
1.2
1.0
1.0
1.0
90
15
15
MAX.
3.0
6
MAX.
140
1.0
1.0
2.0
1.4
1.3
1.5
NE52118
dBm
Unit
Unit
mA
dB
dB
dB
dB
V
V
V
A
A
A