NE5531079A Renesas Electronics Corporation., NE5531079A Datasheet - Page 2

• Manufacturer Part Number: NE5531079A
• Description: 7.5 V Operation Silicon Rf Power Ldmos Fet For Uhf-band 10 W Transmission Amplifiers
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS (T
Operation in excess of any one of these parameters may result in permanent damage.
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
(T
2
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
A
Note 1. V
Note P
= +25°C, unless otherwise specified, using our standard test fixture)
2. Duty Cycle ≤ 50%, T
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
in
= 10 dBm
Parameter
DS
Parameter
Parameter
will be used under 12 V on RF operation.
on
≤ 1 s
Symbol
V
I
Symbol
Symbol
DS
DS
BV
V
G
P
T
T
I
I
η
DS
V
V
I
P
I
P
V
R
I
GS
Note 2
stg
GSS
DSS
g
tot
ch
L
Note 1
DS
DS
add
DS
GS
out
m
DSS
in
th
th
Note
A
= +25°C)
f = 460 MHz, V
V
V
V
Channel to Case
V
I
f = 460 MHz, V
P
I
Data Sheet PU10752EJ01V0DS
DSS
Dset
GS
DS
DS
DS
in
= 25 dBm,
= 6.0 V
= 25 V
= 7.5 V, I
= 7.5 V, I
= 10
= 200 mA (RF OFF)
−55 to +125
μ
Ratings
A
Test Conditions
Test Conditions
125
6.0
3.0
6.0
30
35
DS
DS
DS
DS
= 1.0 mA
= 700±100 mA
= 6.0 V
= 7.5 V,
Unit
°C
°C
W
V
V
A
A
MIN.
1.15
MIN.
39.0
0.8
2.5
−
−
−
25
−
−
−
−
−
−
TYP.
1.55
TYP.
6.0
2.0
25
1.15
40.0
20.5
2.9
3.2
2.0
35
68
−
−
NE5531079A
MAX.
2.05
MAX.
7.5
30
1.55
100
4.0
−
10
−
−
−
−
−
−
dBm
Unit
°C/W
dBm
Unit
V
V
A
nA
nA
dB
%
V
S
V
A