CGH40010 Cree, Inc., CGH40010 Datasheet

no-image

CGH40010

Manufacturer Part Number
CGH40010
Description
0 W, Rf Power Gan Hemt
Manufacturer
Cree, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CGH40010
Manufacturer:
Toshiba
Quantity:
1 400
Part Number:
CGH40010
Manufacturer:
CREE/科锐
Quantity:
20 000
Part Number:
CGH40010F
Manufacturer:
CREE
Quantity:
521
Part Number:
CGH40010P
Manufacturer:
CREE
Quantity:
1 400
CGH4000
0 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40010, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40010 ideal for linear and compressed amplifier circuits.
The transistor is available in both screw-down, flange and solder-
down, pill packages.
FEATURES
Up to 4 GHz Operation
16 dB Small Signal Gain at 2.0 GHz
14 dB Small Signal Gain at 4.0 GHz
13 W typical P
65 % Efficiency at P3dB
28 V Operation
3dB
PRELIMINARY
Subject to change without notice.
www.cree.com/wireless
APPLICATIONS
2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms


Related parts for CGH40010

CGH40010 Summary of contents

Page 1

... CGH400 Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits ...

Page 2

... Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature Thermal Resistance, Junction to Case 1 Screw Torque Note: Measured for the CGH40010F Electrical Characteristics (T Characteristics Symbol DC Characteristics 4 Gate Threshold Voltage V GS(th) Gate Quiescent Voltage V GS(Q) ...

Page 3

... Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for Drain Efficiency at 2.0 GHz Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for Drain Efficiency at 3.6 GHz Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 4

... Typical Performance Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for P1 Power at 3.6 GHz Simulated Maximum Stable Gain, Maximum Available 0.5 Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 5

... Source and Load Impedances Frequency (MHz) 500 1000 1500 2500 3500 Note 1. V Note 2. Optimized for P CGH40010 Power Dissipation De-rating Curve Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 6

... CGH40010-TB Demonstration CGH40010-TB Demonstration 3-000537 REV 2 Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH4000 Rev .5 Preliminary Schematic Amplifier Circuit Outline Amplifier Circuit CGH40010-TB Cree, Inc ...

Page 7

... CAP, 0.5pF, +/-0.05pF, 0603 CAP, 0.7pF, +/-0.1pF, 0603 CAP, 1.0pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF, +/-5%, 0603 CAP,33000PF, 0805,100V, X7R CONN SMA STR PANEL JACK RECP HEADER RT>PLZ.1CEN LK 2 POS HEADER RT>PLZ .1CEN LK 5POS CGH40010F or CGH40010P Amplifier Circuit Qty ...

Page 8

... Typical Package S-Parameters for CGH40010F (Small Signal Frequency Mag S Ang S 500 MHz 0.8785 -143.68 600 MHz 0.8740 -151.05 700 MHz 0.8711 -156.75 800 MHz 0.8690 -161.33 900 MHz 0.8675 -165.16 1.0 GHz 0.8664 -168.44 1.1 GHz 0.8655 -171.33 1.2 GHz 0.8647 -173.91 1 ...

Page 9

... Typical Package S-Parameters for CGH40010F (Small Signal Frequency Mag S Ang S 500 MHz 0.884 -147.00 600 MHz 0.881 -153.95 700 MHz 0.878 -159.32 800 MHz 0.877 -163.65 900 MHz 0.875 -167.27 1.0 GHz 0.874 -170.38 1.1 GHz 0.873 -173.13 1.2 GHz 0.873 -175.60 1 ...

Page 10

... Typical Package S-Parameters for CGH40010F (Small Signal Frequency Mag S Ang S 500 MHz 0.8907 -150.63 600 MHz 0.8877 -157.10 700 MHz 0.8858 -162.09 800 MHz 0.8844 -166.13 900 MHz 0.8834 -169.52 1.0 GHz 0.8825 -172.46 1.1 GHz 0.8818 -175.05 1.2 GHz 0.8812 -177.40 1 ...

Page 11

... Product Dimensions CGH40010F (Package Type — 440166) Product Dimensions CGH40010P (Package Type — 440196) Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.  CGH4000 Rev .5 Preliminary PRELIMINARY Cree, Inc ...

Page 12

... Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639 Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH4000 Rev .5 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

Related keywords