CGH40010 Cree, Inc., CGH40010 Datasheet - Page 2

• Manufacturer Part Number: CGH40010
• Description: 0 W, Rf Power Gan Hemt
• Manufacturer: Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Note:
1
Electrical Characteristics (T
Notes:
1
2
3
4
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Thermal Resistance, Junction to
Case
Screw Torque
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
Case Operating Temperature
RF Characteristics (T
Small Signal Gain
Power Output at 3 dB
Compression
Drain Efficiency
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
2
Measured for the CGH40010F at P
Drain Efficiency = P
When tuned for best efficiency (see the applications chart in this data sheet).
When tuned for best P
Measured on wafer prior to packaging.
1
CGH4000 Rev .5 Preliminary
1,2
4
C
= 25
OUT
1dB
˚
/ P
C, F
(see the applications chart in this data sheet).
DC
0
= 3.7 GHz unless otherwise noted)
Symbol
VSWR
V
V
P
V
G
C
C
C
GS(th)
GS(Q)
I
T
DISS
DS
3dB
η
GD
BR
SS
GS
DS
C
C
= 14 W.
= 25˚C)
Symbol
I
V
T
V
R
GMAX
T
T
STG
T
DSS
θJC
GS
Min.
12.5
S
-3.0
J
-10
2.4
84
10
55
–
–
–
–
–
Typ.
14.5
12.5
5.00
1.32
0.43
-2.5
-2.0
TBD
100
2.7
65
–
Max.
+105
-1.8
–
–
–
–
–
–
–
–
–
–
-55, +150
-10, +2
Rating
175
245
4.0
5.0
84
60
Units
VDC
VDC
VDC
˚C
dB
%
pF
pF
pF
W
Y
A
Conditions
V
V
V
V
V
V
V
No damage at all phase angles,
V
P
V
V
V
OUT
DS
DS
DS
GS
DD
DD
DD
DD
DS
DS
DS
= 10 V, I
= 28 V, I
= 6.0 V, V
= -8 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, V
= 28 V, V
= 28 V, V
= 12 W CW
D
D
D
DQ
DQ
DQ
DQ
gs
gs
gs
GS
= 3.6 mA
= 3.6 mA
= 200 mA
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= 200 mA
= 200 mA
= 200 mA, P
= 200 mA,
= 2.0 V
Units
˚C/W
Volts
Volts
in-oz
USA Tel: [phone]
mA
˚C
˚C
˚C
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
3dB
Cree, Inc.