3SK317 Renesas Electronics Corporation., 3SK317 Datasheet - Page 3

• Manufacturer Part Number: 3SK317
• Description: Mosfets Silicon N-channel Dual Gate Mos Fet Uhf / Vhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

3SK317
Main Characteristics
Rev.2.00
200
150
100
Drain Current vs. Gate1 to Source Voltage
Aug 10, 2005,
50
20
16
12
30
24
18
12
8
4
6
0
0
0
Gate1 to Source Voltage
Gate1 to Source Voltage
Ambient Temperature Ta
Forward Transfer Admittance vs.
3.0 V
V
f = 1 kHz
DS
Maximum Channel Power
Gate1 to Source Voltage
0.4
= 6 V
1
50
V
Dissipation Curve
G2S
2.0 V
2.5 V
0.8
= 0.5 V
2
page 3 of 6
V
1.0 V
100
G2S
1 V
1.5 V
1.2
= 0.5 V
1.5 V
3
V
V
Pulse test
150
G1S
2 V
DS
V
1.6
4
2.5 V
G1S
= 6 V
(°C)
3 V
(V)
(V)
200
5
2
50
40
30
20
16
12
20
10
Drain Current vs. Gate2 to Source Voltage
20
16
12
8
4
0
8
4
0
0
Gate2 to Source Voltage
1.2 V
Drain to Source Voltage V
3.0 V
Typical Output Characteristics
Power Gain vs. Drain Current
2.5 V
Drain Current
4
2
1
4
2
8
V
V
1.5 V
G1S
G1S
1.0 V
0.8 V
0.6 V
2.0 V
= 0.4 V
1.0 V
= 0.5 V
12
6
3
I
D
V
V
f = 200 MHz
V
Pulse test
V
Pulse test
DS
G2S
DS
(mA)
G2S
V
= 6 V
16
8
= 6 V
4
= 3 V
DS
G2S
= 3 V
(V)
(V)
10
20
5