3SK324 Renesas Electronics Corporation., 3SK324 Datasheet

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3SK324

Manufacturer Part Number
3SK324
Description
Mosfets Si Nch Dual Gate Mos Fet Uhf Rf Low Noise Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
3SK324
Manufacturer:
PAN
Quantity:
230
3SK324
Si Nch Dual Gate MOS FET
UHF RF LOW NOISE Amplifier
Features
Outline
Notes:
Absolute Maximum Ratings
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Notes: 2. Value on the glass epoxy board (50 mm
Rev.1.00, May 18,2005, page 1 of 7
Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz)
High gain characteristics; PG = 24 dB typ. (at f = 900 MHz)
Capable low voltage operation; +B = 3.5 V
High Endurance Voltage; V
1. Marking is “UG-”.
Item
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
DS
= 6 V
3
2
Symbol
Pch
V
V
Tstg
Tch
V
I
G1S
G2S
4
DS
D
*2
40 mm
1
1 mm).
–55 to +150
Ratings
250
150
+6
–6
+6
–6
20
6
1. Source
2. Gate1
3. Gate2
4. Drain
REJ03G0532-0100
Unit
mW
mA
May 18, 2005
V
V
V
C
C
(Ta = 25°C)
Rev.1.00

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3SK324 Summary of contents

Page 1

... Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier Features Low noise characteristics 1.0 dB typ. ( 900 MHz) High gain characteristics typ. ( 900 MHz) Capable low voltage operation 3.5 V High Endurance Voltage Outline RENESAS Package code: PTSP0004ZA-A ...

Page 2

... Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Forward transfer admittance Power gain Noise figure 900MHz PG, NF Test Circuit Ω ...

Page 3

... Main Characteristics Maximum Channel Power Dissipation Curve 400 300 200 100 0 50 100 Ambient Temperature Note 3 : When using the glass epoxy board ( Drain Current vs. Gate1 to Source Voltage 20 V =3 0.0 0.5 1.0 Gate1 to Source Voltage Forward Transfer Admittance vs ...

Page 4

... Gain Reduction vs. Gate2 to Source Voltage (start 900 MHz 3 Gate2 to Source Voltage V Gate2 to Source Voltage vs. Power Gain, Noise Figure 3 (start 900 MHz 0 1.0 1.5 2.0 Gate2 to Source Voltage V Maximum Stable Gain vs ...

Page 5

... Rev.1.00, May 18,2005, page Maximum Stable Gain vs. Frequency 3 G2S -10 0.0 0.5 1.0 1.5 2.0 Frequency f (GHz) 2.5 3.0 ...

Page 6

... S parameter S11 f (GHz) Mag Phase 0.1 0.996 -6.0 0.2 0.989 -11.7 0.3 0.973 -17.1 0.4 0.956 -22.6 0.5 0.940 -27.8 0.6 0.920 -32.9 0.7 0.899 -37.7 0.8 0.879 -42.4 0.9 0.858 -46.9 1.0 0.840 -51.3 1.1 0.816 -55.5 1.2 0.794 -59.3 1.3 0.772 -62.8 1.4 0.752 -66.0 1.5 0.734 -68.5 1.6 0.727 -69.7 1.7 0.754 -70.0 1.8 0.825 -73.3 1.9 0.877 -80.3 2.0 0.890 -88.0 2.1 0.882 -94.7 2.2 0.867 -100.9 2.3 0.851 -106.6 2.4 0.834 -112.1 2.5 0.816 -117.5 2.6 0.795 -122.8 2.7 0.771 -128.1 2.8 0.744 -133.2 2 ...

Page 7

... A-A Section B-B Section Ordering Information Part Name 3SK324UG- 3000 pcs. Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, May 18,2005, page Package Name MASS[Typ.] CMPAK-4(T) / CMPAK-4(T)V ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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