NE856M23 Renesas Electronics Corporation., NE856M23 Datasheet - Page 2

• Manufacturer Part Number: NE856M23
• Description: Npn Silicon Transistor
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
V
V
V
T
P
CBO
CEO
T
EBO
I
STG
DATA SUBJECT TO CHANGE WITHOUT NOTICE
C
T
J
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 [phone] Telex 34-6393 FAX [phone]
120
100
80
60
40
20
8
7
6
5
4
3
2
1
0
0
0
1
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I
EXCLUSIVE NORTH AMERICAN AGENT FOR
B
GAIN BANDWIDTH PRODUCT vs.
Collector to Emitter Voltage, V
= 40 A step
V
f = 2 GHz
CE
COLLECTOR CURRENT vs.
PARAMETERS
2
= 3 V
COLLECTOR CURRENT
Collector Current, I
4
6
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
10
8
400 A
C
10
(mA)
UNITS
mW
mA
V
V
V
CE
C
C
12
I
(V)
B
200 A
= 40 A
1
100
14
(T
-65 to +150
RATINGS
A
(T
= 25 C)
100
TBD
150
20
12
3
A
= 25 C)
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
1000
100
10
120
100
80
60
40
20
10
8
6
4
2
0
0
0.01
NOISE FIGURE/ASSOCIATED GAIN vs.
1
0
V
f = 1 GHz
CE
Base to Emitter Voltage, V
V
BASE TO EMITTER VOLTAGE
CE
COLLECTOR CURRENT vs.
= 3 V
0.2
COLLECTOR CURRENT
COLLECTOR CURRENT
= 3 V
Collector Current, I
DC CURRENT GAIN vs.
Collector Current, I
0.1
0.4
10
1
NF
G
0.6
A
C
C
(mA)
(mA)
10
BE
0.8
V
CE
(V)
= 3 V
100
100
1
20
16
12
8
4
0
02/10/2000