NES1821B-30 Renesas Electronics Corporation., NES1821B-30 Datasheet
NES1821B-30
Related parts for NES1821B-30
NES1821B-30 Summary of contents
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... L-BAND POWER GaAs FET DESCRIPTION The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology ...
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... C) A MIN. TYP. MAX 18.0 DSS - - -- V 4.0 2 1.4 1 44.5 45 11 dBm T G.C.P ch ° comp NES1821B-30 UNIT TEST CONDITIONS 2 2 ° C/W Channel to Case freq. = 1.96 GHz dBm 1.0 A set ...
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... TYPICAL RF PERFORMANCE f = 1.96 GHz set Pout (dBm Pout Pin (dBm NES1821B-30 I (mA) I (mA 9000 200 7000 150 100 5000 3000 50 1000 0 –1000 – ...
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... NES1821B- MAG. ANG. 0.903 144.0 0.904 143.5 0.908 143 0.909 142.5 0.912 141.8 0.914 141.3 0.919 140.7 0.920 140.0 0.924 139.3 0.927 138 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. NES1821B-30 M4 96. 5 ...