Ordering number : EN8400A
4MP10CH
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : GR
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwideth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance
•
•
•
High f T : f T =400MHz (typ).
High breakdown voltage : V CEO 200V.
Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=1.7pF.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
h FE 1
h FE 2
Tstg
Cob
PNP Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose
Amplifier Applications
I CP
Cre
P C
I C
Tj
f T
V CB =- -150V, I E =0A
V EB =- -2V, I C =0A
V CE =- -10V, I C =--10mA
V CE =- -10V, I C =--60mA
V CE =- -30V, I C =--30mA
I C =--30mA, I B =--3mA
I C =--10 A, I E =0A
I C =--1mA, R BE =
I E =--100 A, I C =0A
V CB =- -30V, f=1MHz
V CB =- -30V, f=1MHz
Mounted on a ceramic board (600mm
4MP10CH
D2005 MS IM TB-00001846 / 72905AA MS IM TB-00001574
Conditions
Conditions
2
0.8mm)
min
--200
--200
60
20
--4
Ratings
typ
Ratings
400
2.3
1.7
--55 to +150
max
--200
--200
--100
--200
600
150
--0.1
--1.0
--0.6
200
--4
No.8400-1/3
MHz
Unit
mW
Unit
mA
mA
pF
pF
V
V
V
V
V
V
V
C
C
A
A