VEC2401 Sanyo Semiconductor Corporation, VEC2401 Datasheet

VEC2401

Manufacturer Part Number

VEC2401

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.VEC2401.pdf (4 pages)

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Ordering number : ENA0264

VEC2401

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : BG

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

•

The best suited for load switching applications.

Low ON-resistance.

Composite type facilitating high-density mounting.

2.5V drive.

Mounting high 0.75mm.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V DSS

V GSS

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

P T

yfs

I D

SANYO Semiconductors

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =1mA, V GS =0V

V DS =20V, V GS =0V

V GS = 8V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =2.5A

I D =2A, V GS =4V

I D =1A, V GS =2.5V

V DS =10V, f=1MHz

VEC2401

Conditions

80906 / 11006PE MS IM TB-00002023

0.8mm)1unit

0.8mm)

DATA SHEET

min

0.5

4.5

Ratings

typ

Ratings

570

110

7.5

--55 to +150

Continued on next page.

max

150

4.5

0.9

1.0

1.3

No. A0264-1/4

Unit

Related parts for VEC2401

VEC2401 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2401 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... See specified Test Circuit See specified Test Circuit =10V =4V =4.5A Qgs V DS =10V =4V =4.5A Qgd V DS =10V =4V =4. =4.5A = =2. OUT VEC2401 S Ratings min typ max 15 105 50 52 7.6 1.2 2.1 0.85 Electrical Connection ...

Page 3

... 1 0.1 1.0 Drain Current Time -- =10V 100 (on 0.1 1.0 Drain Current VEC2401 3 =10V 2.5 2.0 1.5 1.0 0.5 0 0.3 0.4 0 IT08593 80 Ta= --60 --40 IT09784 = 1 ...

Page 4

... Ambient Temperature Note on usage : Since the VEC2401 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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