VEC2102 Sanyo Semiconductor Corporation, VEC2102 Datasheet - Page 2

• Manufacturer Part Number: VEC2102
• Description: Pnp Epitaxial Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Note : The specifications shown above are for each individual transistor.
Package Dimensions
unit : mm (typ)
7012-007
Switching Time Test Circuit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turm-ON Time
Storage Time
Fall Time
INPUT
PW=20μs
D.C.≤1%
50Ω
I C =20I B1 = –20I B2 =500mA
8
V R
1
V BE =5V
7
Parameter
2
2.9
6 5
0.65
I B1
I B2
3
100μF
+
R B
4
0.3
470μF
+
V CC = --12V
1 : Base
2 : Emitter
3 : Emitter
4 : Base
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : VEC8
0.15
R L
V (BR)CBO
V (BR)CEO
V (BR)ECO
V (BR)EBO
V CE (sat)1
V CE (sat)2
V BE (sat)
Symbol
I CBO
I EBO
h FE
Cob
t stg
t on
f T
t f
Vout
V CB =- -30V, I E =0A
V EB =- -4V, I C =0A
V CE =- -2V, I C =--500mA
V CE =- -10V, I C =--500mA
V CB =- -10V, f=1MHz
I C =- -1.5A, I B =--30mA
I C =- -1.5A, I B =--75mA
I C =- -1.5A, I B =--30mA
I C =- -10μA, I E =0A
I C =- -1mA, R BE =∞
I C =- -10μA, R CB =∞
I E =--10μA, I C =0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VEC2102
Electrical Connection
Conditions
8
1
7
2
6
3
5
4
min
--6.5
1 : Base
2 : Emitter
3 : Emitter
4 : Base
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Top view
200
--30
--30
--5
Ratings
typ
- -0.83
--160
--110
380
270
25
50
25
max
--235
--160
--0.1
--0.1
--1.2
560
No. A0291-2/4
MHz
Unit
mV
mV
μA
μA
ns
ns
ns
pF
V
V
V
V
V