VEC2611 Sanyo Semiconductor Corporation, VEC2611 Datasheet - Page 5
VEC2611
Manufacturer Part Number
VEC2611
Description
N-channel And P-channel Silicon Mosfets
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.VEC2611.pdf
(6 pages)
1000
0.01
100
1.0
0.1
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
1.2
1.0
0.9
0.8
0.6
0.4
0.2
7
5
3
2
7
5
3
2
0.01
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
V DS =10V
I D =3A
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
Operation in this
area is limited by R DS (on).
2 3
2
1
20
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
2
5 7
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
0.1
6
3
60
V GS -- Qg
2
8
4
P D -- Ta
3
A S O
5 7
10
80
5
1.0
12
6
100
2
✕0.8mm) 1unit
2
14
7
3
120
5 7
16
8
PW ≤10µs
[Nch, Pch]
f=1MHz
10
140
18
IT03497
IT03498
IT11102
IT11104
9
[Nch]
[Nch]
[Nch]
2
160
20
10
VEC2611
3
--0.01
1000
--1.0
--0.1
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--10
100
--0.01
7
5
3
2
7
5
3
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
V DS = -- 6V
I D = --2.6 A
2 3
Operation in this
area is limited by R DS (on).
1
--2
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
5 7
Total Gate Charge, Qg -- nC
--0.1
2
--4
V GS -- Qg
2
3
3
A S O
--6
5 7
--1.0
4
2
✕0.8mm) 1unit
--8
2
5
3
PW ≤10µs
5 7
No. A0425-5/6
--10
f=1MHz
--10
6
IT04332
IT04333
IT11103
100µs
[Pch]
[Pch]
[Pch]
2
--12
7
3