VEC2601 Sanyo Semiconductor Corporation, VEC2601 Datasheet
VEC2601
Related parts for VEC2601
VEC2601 Summary of contents
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... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2601 SANYO Semiconductors N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ...
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... Source1 2 : Gate1 3 : Drain2 4 : Drain2 5 : Source2 6 : Gate2 7 : Drain1 8 : Drain1 SANYO : VEC8 VEC2601 Symbol Conditions R DS (on =80mA = (on =40mA =2. (on =10mA =1.5V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit ...
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... IT00031 [Nch] 100 V GS =2. 1.0 IT00033 --10V --4. --1. =6.67Ω D PW=10µs D.C.≤1% G VEC2601 P.G 50Ω =10V 0 0 0.5 1.0 1.5 2.0 Gate-to-Source Voltage (on Ta=75°C 25°C 3 --25° 0.01 0.1 Drain Current ...
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... Operation in this 0.01 area is limited (on Ta=25°C 3 Single pulse 2 ✕0.8mm) 1unit 2 Mounted on a ceramic board (900mm 0.001 0.01 0.1 1.0 Drain-to-Source Voltage VEC2601 [Nch 0.01 100 120 140 160 0.01 IT00035 [Nch] 1000 V GS =0V 7 ...
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... Drain Current Time -- 100 (on --0.1 --1.0 Drain Current VEC2601 [Pch] -- --10V --6 --5 --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 --0.2 IT11952 [Pch] 160 Ta=25 ° C 140 120 100 --8 --9 --10 --60 --40 ...
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... Ambient Temperature °C Note on usage : Since the VEC2601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...