MAT5006 Hope Microelectronics co., Ltd, MAT5006 Datasheet - Page 2
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MAT5006
Manufacturer Part Number
MAT5006
Description
Npn 4.5ghz Wideband Transistor
Manufacturer
Hope Microelectronics co., Ltd
Datasheet
1.MAT5006.pdf
(5 pages)
M A T5006
FEATURES
DESCREPTION
from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process
(NEST2 process) which is an MAR proprietary fabrication technique
QUICK REFERENCE DATA
Tel:+86-755-82973806
The MAS5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers
v
V
P
C
f
G
F
SYMBOL
T
CBO
I
CEO
tot
re
C
UM
Low Voltage Use.
High fT: 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
Low Cre: 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
Low NF: 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
SOT-523 / SC-75 package
collector-base
voltage
collector-emitter
voltage
collector current
(DC)
total power
dissipation
Feedback
capacitace
Trasition
frequency
maximum
unilateral
gain
noise figure
PARAMETER
Fax:+86-755-82973550
power
open emitter
open base
Ts≤95℃
IC=0; VCE=3V; f=1MHz
IC=7mA; VCE=3V
IC=7mA; VCE=3V; f=1GHz; Tamb=25℃
IC=7mA; VCE=3V; f=1GHz;s=opt;Tamb=25℃
E-mail:
Page 2 of 5
CONDITIONS
sales@hoperf.com
The item can replace 2SC5006
http://www.hoperf.com
0.7
4.5
9
1.2
TYP.
20
12
100
125
1.5
-
-
2.5
MAX.
V
V
mA
mW
pF
GHz
dB
dB
UNIT