EMH1302 Sanyo Semiconductor Corporation, EMH1302 Datasheet

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EMH1302

Manufacturer Part Number
EMH1302
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : EN8721
EMH1302
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : JB
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Low ON-resistance.
4V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
SANYO Semiconductors
PW 10 s, duty cycle 1%
Mounted on a ceramic board (1200mm
I D =--1mA, V GS =0V
V DS =- -30V, V GS =0V
V GS = 16V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -2.5A
I D =--2.5A, V GS =- -10V
I D =--1.5A, V GS =- -4.5V
I D =--1.5A, V GS =- -4V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
EMH1302
Conditions
Conditions
2
0.8mm)
DATA SHEET
71006PA MS IM TC-00000034
min
--1.2
--30
3.0
Ratings
typ
Ratings
850
160
135
5.1
39
65
74
12
43
80
45
Continued on next page.
--55 to +150
max
150
--2.6
--30
--20
1.5
115
20
--5
10
51
92
--1
No.8721-1/4
Unit
Unit
m
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A

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EMH1302 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN EMH1302 SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... G P EMH1302 Symbol Conditions =--10V -10V =--5A Qgs V DS =--10V -10V =--5A Qgd V DS =--10V -10V =-- =--5A =0V Electrical Connection 0.125 V OUT EMH1302 Ratings min typ max 16.5 3.1 3.1 --0.85 --1 Source 2 : Source 3 : Source 4 : Gate 5 : Drain ...

Page 3

... Drain Current Time -- 100 (on --0.1 --1.0 Drain Current EMH1302 -- --10V --7 --6 --5 --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 --0.5 IT11220 160 Ta=25 C 140 120 100 --12 --14 --16 --60 --40 IT11222 --10 ...

Page 4

... Ambient Temperature Note on usage : Since the EMH1302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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