BB503M Renesas Electronics Corporation., BB503M Datasheet - Page 10

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BB503M

Manufacturer Part Number
BB503M
Description
Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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BB503M
10
180°
–150°
Test Condition:
0
150°
–.2
Test Condition:
.2
S12 Parameter vs. Frequency
50 to 1000 MHz (50 MHz step)
–.4
50 to 1000 MHz (50 MHz step)
.4
S11 Parameter vs. Frequency
–120°
.2
120°
–.6
.6
.4
V
V
Zo = 50
–.8
V
V
Zo = 50
DS
G2S
.8
.6 .8 1
DS
G2S
= 5 V , V
–90°
= 5 V , V
–1
= 4 V , R
90°
1
= 4 V , R
1.5
G1
G1
Scale: 0.002 / div.
–1.5
2
G
1.5
= 5 V
G
–60°
= 5 V
= 47 k
60°
= 47 k
3 4 5
–2
2
3
10
–3
,
–30°
30°
4
,
–4
5
–5
10
–10
180°
–150°
150°
0
–.2
Test Condition:
Test Condition:
.2
S22 Parameter vs. Frequency
–.4
50 to 1000 MHz (50 MHz step)
50 to 1000 MHz (50 MHz step)
.4
S21 Parameter vs. Frequency
–120°
.2
120°
–.6
.6
.4
V
V
Zo = 50
–.8
V
V
Zo = 50
.8
.6 .8 1
DS
G2S
DS
G2S
= 5 V , V
–90°
= 5 V , V
–1
90°
= 4 V , R
1
= 4 V , R
1.5
G1
Scale: 1 / div.
–1.5
G1
2
1.5
G
G
= 5 V
–60°
= 5 V
= 47 k
60°
= 47 k
3 4 5
–2
2
3
10
–3
–30°
,
30°
4
,
–4
5
–5
10
–10

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