FP303 Sanyo Semiconductor Corporation, FP303 Datasheet - Page 3
FP303
Manufacturer Part Number
FP303
Description
Tr Npn Epitaxial Planar Silicon Transistor Sbd Schottky Barrier Diode
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.FP303.pdf
(5 pages)
1000
1000
100
100
2.4
2.0
1.6
1.2
0.8
0.4
10
10
2.4
2.0
1.6
1.2
0.8
0.4
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
10
0
5
0
7
0.01
2
Collector-to-Emitter Voltage, V CE – V
0.2
0.4
Base-to-Emitter Voltage, V BE – V
3
2
Collector Current, I C – mA
3
Collector Current, I C – A
5
0.4
0.8
V CE (sat) -- I C
7
5
I C -- V BE
100
I C -- V CE
f T -- I C
7
0.1
0.6
1.2
2
2
3
3
0.8
1.6
5
5
7
I B =0
7
1000
I C / I B =20
V CB =10V
1.0
1.0
2.0
V CE =2V
ITR11098
ITR11100
ITR11102
ITR11096
[TR]
[TR]
[TR]
2
[TR]
2
1.2
2.4
3
3
FP303
1000
100
100
1.0
10
10
1.2
1.0
0.8
0.6
0.4
0.2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
7
5
3
2
7
5
3
1.0
0
5 7
5 7
0
0.01
0.01
Collector-to-Emitter Voltage, V CE – V
2
2
Collector-to-Base Voltage, V CB – V
2
2
3
Collector Current, I C – A
Collector Current, I C – A
3
3
V BE (sat) -- I C
4
5
Cob -- V CB
5
5 7
h FE -- I C
I C -- V CE
7
7
0.1
0.1
10
6
2
2
3
3
2
8
5
5 7
3
I B =0
7
I C / I B =20
1.0
1.0
10
V CE =2V
No.4657-3/5
f=1MHz
5
ITR11099
ITR11101
ITR11103
ITR11097
[TR]
[TR]
[TR]
7
[TR]
2
2
100
12
3
3