2MBI100U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI100U4H-170 Datasheet - Page 10

• Manufacturer Part Number: 2MBI100U4H-170
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

10000
10000
1000
1000
150
100
100
100
50
10
10
0
0.1
0.1
0
Vcc=900V, Ic=100A, VGE=±15V, Tj= 125°C
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=4.7Ω, Tj= 25°C
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=100A, VGE=±15V, Tj= 25°C
Switching loss vs. Gate resistance (typ.)
1.0
1.0
50
Gate resistance : RG [Ω]
Gate resistance : RG [Ω]
Collector current : Ic [A]
ton
toff
tr
tf
10.0
10.0
100
100.0
100.0
150
Eon
Eoff
Err
ton
toff
tr
tf
1000.0
1000.0
200
10000
300
200
100
1000
+VGE=15V,-VGE <= 15V, RG >= 4.7Ω ,Tj <= 125°C
100
50
45
40
35
30
25
20
15
10
0
10
5
0
0
0
Vcc=900V, VGE=±15V, Rg=4.7Ω, Tj=125°C
Switching time vs. Collector current (typ.)
0
Switching loss vs. Collector current (typ.)
MS5F6143
toff
Reverse bias safe operating area (max.)
Vcc=900V, VGE=±15V, Rg=4.7Ω
Collector-Emitter voltage : VCE [V]
50
500
50
Collector current : Ic [A]
Collector current : Ic [A]
100
100
1000
150
150
1500
ton
tr
tf
Eoff(125°C)
Eon(125°C)
10
Err(125°C)
Eon(25°C)
Eoff(25°C)
Err(25°C)
H04-004-03a
13
200
200
a
b