2MBI100U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI100U4H-170 Datasheet - Page 9
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2MBI100U4H-170
Manufacturer Part Number
2MBI100U4H-170
Description
Igbt Module
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2MBI100U4H-170.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2MBI100U4H-170
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
2MBI100U4H-170
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
Part Number:
2MBI100U4H-170
Quantity:
50
Part Number:
2MBI100U4H-170-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
1000.0
250
200
150
100
250
200
150
100
100.0
50
50
10.0
0
0
1.0
0.1
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
0
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
Collector-Emitter voltage : VCE [V]
VGE=15V / chip
10
Tj= 25°C / chip
VGE=20V 15V
2
2
Tj=25°C
3
3
20
Coes
Cres
Cies
12V
Tj=125°C
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
250
200
150
100
8
6
4
2
0
50
0
Collector current vs. Collector-Emitter voltage (typ.)
0
5
0
MS5F6143
Vcc=900V, Ic=100A,Tj= 25°C
Dynamic Gate charge (typ.)
VCE
Collector-Emitter voltage : VCE [V]
100
1
Gate-Emitter voltage : VGE [V]
10
Tj=25°C / chip
Gate charge : Qg [nC]
Tj= 125°C/ chip
2
200
15
VGE=20V 15V
3
300
20
Ic=200A
Ic=100A
Ic=50A
VGE
4
H04-004-03a
9
12V
10V
8V
400
13
25
5
a
b