2MBI300U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI300U4H-170 Datasheet - Page 10

• Manufacturer Part Number: 2MBI300U4H-170
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

10000
10000
1000
1000
300
250
200
150
100
100
100
50
10
10
0
0.1
0.1
Vcc=900V, Ic=300A, VGE=±15V, Tj= 125°C
0
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj= 25°C
Vcc=900V, Ic=300A, VGE=±15V, Tj= 25°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
100
ton
toff
tr
tf
Gate resistance : RG [Ω]
Gate resistance : RG [Ω]
Collector current : Ic [A]
1.0
200
1.0
300
10.0
10.0
400
500
ton
toff
tr
tf
Eon
Eoff
Err
100.0
100.0
600
10000
800
600
400
200
1000
+VGE=15V,-VGE <= 15V, RG >= 1.5Ω ,Tj <= 125°C
100
150
125
100
10
0
75
50
25
0
0
Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj=125°C
Switching time vs. Collector current (typ.)
0
Switching loss vs. Collector current (typ.)
0
MS5F6137
Reverse bias safe operating area (max.)
toff
Vcc=900V, VGE=±15V, Rg=1.5Ω
100
100
Collector-Emitter voltage : VCE [V]
500
Collector current : Ic [A]
Collector current : Ic [A]
200
200
300
300
1000
400
400
Err(125°C)
1500
500
500
Eoff(125°C)
Eoff(25°C)
Eon(125°C)
Err(25°C)
Eon(25°C)
ton
tr
tf
H04-004-03a
10
13
600
600
a