2MBI300U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI300U4H-170 Datasheet - Page 9

• Manufacturer Part Number: 2MBI300U4H-170
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

1000.0
800
600
400
200
800
600
400
200
100.0
10.0
0
0
1.0
0.1
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
0
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
Collector-Emitter voltage : VCE [V]
VGE=15V / chip
10
Tj= 25°C / chip
2
2
VGE=20V 15V
Tj=25°C
3
3
20
Cies
Coes
Cres
12V
Tj=125°C
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
800
600
400
200
8
6
4
2
0
0
Collector current vs. Collector-Emitter voltage (typ.)
5
0
0
MS5F6137
Vcc=900V， Ic=300A，Tj= 25°C
Dynamic Gate charge (typ.)
200
Collector-Emitter voltage : VCE [V]
1
Gate-Emitter voltage : VGE [V]
10
VCE
Tj=25°C / chip
Gate charge : Qg [nC]
Tj= 125°C/ chip
400
2
15
VGE=20V 15V
600
3
VGE
20
800
Ic=600A
Ic=300A
Ic=150A
4
H04-004-03a
9
12V
10V
8V
1000
13
25
5
a