6MBI75S-120 Fuji Electric holdings CO.,Ltd, 6MBI75S-120 Datasheet - Page 2

• Manufacturer Part Number: 6MBI75S-120
• Description: Igbt Module S Series 1200v / 75a 6 In One-package
• Manufacturer: Fuji Electric holdings CO.,Ltd

6MBI75S-120
Characteristics
20000
10000
1000
200
150
100
200
150
100
100
50
50
0
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
5
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
VGE=0V, f= 1MHz, Tj= 25
10
VGE=15V (typ.)
Tj= 25
2
2
15
o
C (typ.)
VGE= 20V
20
Tj= 25
3
3
15V
o
C
o
25
C
12V
Tj= 125
4
4
30
Cies
Coes
Cres
o
C
10V
8V
35
5
5
1000
200
150
100
800
600
400
200
50
10
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
1
200
Collector - Emitter voltage : VCE [ V ]
10
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=75A, Tj= 25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125
Tj= 25
2
400
o
15
o
C (typ.)
C (typ.)
3
VGE= 20V
o
IGBT Modules
C
600
20
Ic= 150A
Ic= 75A
Ic= 37.5A
4
15V
12V
10V
8V
800
25
5
25
20
15
10
5
0