VND5025BK-E STMicroelectronics, VND5025BK-E Datasheet - Page 21

• Manufacturer Part Number: VND5025BK-E
• Description: Double Channel High Side Driver With Analog Current Sense For Automotive Applications
• Manufacturer: STMicroelectronics

VND5025BK-E
3
3.1
3.1.1
Application information
Figure 26. Application schematic
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
Solution 1: Resistor in the ground line (R
This first solution can be used with any type of load.
The following formulas indicate how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power Dissipation in R
This resistor can be shared among several different HSDs. Please note that the value of this
resistor is calculated with formula (1), where I
state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground, the R
produces a shift (I
shift varies depending on how many devices are ON in the case of several high-side drivers
sharing the same R
Note: Channel 2 has the same internal circuit as channel 1.
R
R
+5V
µC
GND
GND
GND
≤ 600mV / (I
≥ (-V
is the DC reverse ground pin current and can be found in the absolute
CC
S(on)max
C
) / (-I
EXT
GND
R
R
R
prot
prot
prot
GND
GND
S(on)max
.
* R
)
(when V
GND
R
)
SENSE
CURRENT SENSE
CS_DIS
) in the input thresholds and the status output values. This
INPUT
CC
P
D
< 0 during reverse battery situations) is:
= (-V
CC
S(on)max
)
2
V
GND
/ R
GND
GND
becomes the sum of the maximum on-
R
GND
GND
GND
only)
resistor:
V
CC
D
GND
Application information
OUTPUT
D
21/31
GND
ld