ADN2850 Analog Devices, Inc., ADN2850 Datasheet - Page 2

• Manufacturer Part Number: ADN2850
• Description: Nonvolatile Memory, Dual 1024 Position Programmable Resistors
• Manufacturer: Analog Devices, Inc.

ADN2850–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS 25 k , 250 k VERSIONS
Parameter
DC CHARACTERISTICS RHEOSTAT MODE (Specifications apply to all RDACs)
RESISTOR TERMINALS
DIGITAL INPUTS AND OUTPUTS
POWER SUPPLIES
CURRENT MONITOR TERMINALS
DYNAMIC CHARACTERISTICS
Resistor Differential Nonlinearity
Resistor Integral Nonlinearity
Resistance Temperature Coefficient
Wiper Resistance
Channel Resistance Matching
Nominal Resistor Tolerance
Terminal Voltage Range
Capacitance
Capacitance
Common-Mode Leakage Current
Input Logic High
Input Logic Low
Input Logic High
Input Logic Low
Input Logic High
Input Logic Low
Output Logic High (SDO, RDY)
Output Logic Low
Input Current
Input Capacitance
Single-Supply Power Range
Dual-Supply Power Range
Positive Supply Current
Positive Supply Current
Programming Mode Current
Read Mode Current
Negative Supply Current
Power Dissipation
Power Supply Sensitivity
Current Sink at V
Current Sink at V
Resistor Noise Spectral Density
Analog Crosstalk (C
5
5
Wx
Bx
1
2
8
5
9
7
W1
/C
4
W2
)
3
3
6
5, 10
Symbol
R-DNL
R-INL
R
V
C
C
I
V
V
V
V
V
V
V
V
I
C
V
V
I
I
I
I
I
P
P
I
I
e
C
CM
IL
DD
DD
DD(PG)
DD(XFR)
SS
1
2
N_WB
DISS
SS
R
R
R
W, B
IH
IL
IH
IL
IH
IL
OH
OL
DD
DD
W
B
W
IL
T
WB
WB
WB
/V
/
/R
SS
T
WB
Conditions
R
R
V
Code = Half-scale
V
Code = Half-scale
Ch 1 and 2 R
f = 1 MHz, measured to GND,
Code = Half-scale
f = 1 MHz, measured to GND,
Code = Half-scale
V
With respect to GND, V
With respect to GND, V
With respect to GND, V
With respect to GND, V
With respect to GND,
V
With respect to GND,
V
R
I
V
V
V
T
V
V
V
V
V
V
∆V
R
V
V
Code 1 = Code 2 = 200
OL
DD
DD
W
DD
DD
IN
SS
IH
IH
IH
IH
IH
DD
IH
B1
W2
WB
WB
PULL-UP
A
WB_FS
DD
= 25
= V
= 1.6 mA, V
= V
= 0 V or V
= 0 V
= V
= V
= V
= V
= V
= V
= 100 mV p-p @ f = 100 kHz,
= +2.5 V, V
= 5 V, I
= 3 V, I
= +2.5 V, V
= +2.5 V, V
= 5 V ± 10%
B
= 25 kΩ/250 kΩ, f = 1 kHz
B2
DD
DD
DD
DD
DD
DD
–2–
o
C
= V
= 2.2 kΩ to 5 V
= 0 V, Measured V
or V
or V
or V
or V
or V
or V
W
W
DD
WB
= 100 µA,
= 100 µA,
DD
IL
IL
IL
IL
IL
IL
/2
, Dx = 3FF
LOGIC
SS
SS
SS
= GND,
= GND
= GND
= GND
= GND,
= GND
= –2.5 V
= –2.5 V
= –2.5 V
= 5 V
H
DD
DD
DD
DD
H
= 5 V
= 5 V
= 3 V
= 3 V
W1
with
(V
unless otherwise noted.)
DD
Min
–2
–4
–30
V
2.4
2.1
2.0
4.9
3.0
± 2.25
0.3
0.0001
= 3 V to 5.5 V and –40 C < T
SS
Typ
35
50
200
0.1
11
80
0.01
5
2
3.5
35
3
3.5
18
0.002
20/64
–65
2
Max
+2
+4
100
+30
V
± 2
0.8
0.6
0.5
0.4
± 2.25
5.5
± 2.75
4.5
6.0
9
6.0
50
0.01
10
10
1
DD
A
Unit
LSB
LSB
ppm/°C
Ω
Ω
%
%
V
pF
pF
µA
V
V
V
V
V
V
V
V
µA
pF
V
V
µA
µA
mA
mA
µA
µW
%/%
mA
mA
nV/√Hz
dB
< +85 C,
REV. B