MBM29DL16XTE70PFTN Meet Spansion Inc., MBM29DL16XTE70PFTN Datasheet

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MBM29DL16XTD/BD Data Sheet (Retired Product) This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet ...

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This page left intentionally blank MBM29DL16XTD/BD_DS05-20874-8E July 12, 2007 ...

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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTD/BD ■ FEATURES • 0.33 μm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank ...

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Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 ...

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MBM29DL16XTD/BD ■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(1) and 48-ball FBGA Package. ...

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MBM29DL16XTD/BD Device Bank Divisions Table Device Organization Part Number MBM29DL161TD/BD MBM29DL162TD/BD × 8/× 16 MBM29DL163TD/BD MBM29DL164TD/BD MBM29DL16XTD/BD Bank 1 Megabits Sector Sizes 0.5 Mbit Eight 8K byte/4K word Eight 8K byte/4K word, 2 Mbit three 64K byte/32K word Eight 8K ...

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MBM29DL16XTD/BD ■ PIN ASSIGNMENTS N. RESET 12 N.C. 13 WP/ACC ...

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...

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MBM29DL16XTD/BD ■ BLOCK DIAGRAM RESET State WE Control CE & OE Command BYTE Register WP/ACC ■ LOGIC SYMBOL 10 -70/90 Cell Matrix Bank ...

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DEVICE BUS OPERATION MBM29DL16XTD/BD User Bus Operations Table (BYTE = V Operation 1 Auto-Select Manufacturer Code* Auto-Select Device Code* 1 Read* 3 Standby Output Disable Write (Program/Erase Enable Sector Group Protection* * Verify Sector Group Protection* 2, ...

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MBM29DL16XTD/BD MBM29DL16XTD/BD Command Definitions Table First Bus Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word 1 XXXh F0h Read/Reset* 1 Byte Word 555h 3 Read/Reset* 1 AAAh ...

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The valid addresses are This command is valid during HiddenROM mode The data “00h” is also acceptable The fourth bus cycle is only for read. Notes: ...

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MBM29DL16XTD/BD MBM29DL161TD/BD Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code Byte MBM29DL161TD Word Device Code Byte MBM29DL161BD Word Sector Group Protection * for Byte mode. At Byte mode, DQ − Outputs 01h at ...

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MBM29DL162TD/BD Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code Byte MBM29DL162TD Word Device Code Byte MBM29DL162BD Word Sector Group Sector Group Protection * for Byte mode. At Byte mode, DQ − Outputs 01h ...

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MBM29DL16XTD/BD MBM29DL163TD/BD Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code Byte MBM29DL163TD Word Device Code Byte MBM29DL163BD Word Sector Group Protection * for Byte mode. At Byte mode, DQ − Outputs 01h at ...

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MBM29DL164TD/BD Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code Byte MBM29DL164TD Word Device Code Byte MBM29DL164BD Word Sector Group Sector Group Protection * for Byte mode. At Byte mode, DQ − Outputs 01h ...

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MBM29DL16XTD/BD ■ FLEXIBLE SECTOR-ERASE ARCHITECTURE Sector Address Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 0 ...

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Sector Address Table (MBM29DL161BD) Sector Address Bank Sector Bank Address SA38 SA37 SA36 SA35 SA34 ...

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MBM29DL16XTD/BD Sector Address Bank Bank Sector Address SA0 SA1 SA2 SA3 SA4 SA5 ...

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Sector Address Table (MBM29DL162BD) Sector Address Bank Bank Sector Address SA38 SA37 SA36 SA35 SA34 ...

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MBM29DL16XTD/BD Sector Address Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 0 ...

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Sector Address Table (MBM29DL163BD) Sector Address Bank Sector SA38 SA37 SA36 SA35 SA34 1 ...

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MBM29DL16XTD/BD Sector Address Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 0 ...

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Sector Address Table (MBM29DL164BD) Sector Address Bank Sector SA38 SA37 SA36 SA35 SA34 1 ...

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MBM29DL16XTD/BD Sector Group Address Table (MBM29DL16XTD) Sector Group SGA0 SGA1 SGA2 0 0 SGA3 0 1 SGA4 0 1 SGA5 1 0 SGA6 1 0 SGA7 1 1 ...

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Sector Group Address Table (MBM29DL16XBD) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 SGA8 0 0 ...

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MBM29DL16XTD/BD Common Flash Memory Interface Code Table Description Query-unique ASCII string “QRY” Primary OEM Command Set 02h: AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table V ...

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FUNCTIONAL DESCRIPTION • Simultaneous Operation MBM29DL16XTD/BD have feature, which is capability of reading data from one bank of memory while a program or erase operation is in progress in the other bank of memory (simultaneous operation), in addition to ...

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MBM29DL16XTD/BD When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at V (CE = “H” or “L”). Under this condition the current is consumed is less than 5 μA Max. Once the RESET ...

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Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does ...

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MBM29DL16XTD/BD • RESET Hardware Reset The MBM29DL16XTD/BD devices may be reset by driving the RESET pin to V requirement and has to be kept low (V Any operation in the process of being executed will be terminated and the internal ...

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COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the read mode. Some ...

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MBM29DL16XTD/BD If the software (program code) for Autoselect command is stored into the Flash memory, the device and manufacture codes should be read from the other bank where is not contain the software. To terminate the operation necessary ...

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Sector Erase Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector ...

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MBM29DL16XTD/BD When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading data in this mode is the same as reading from the standard read mode except that the data must be read from sectors that ...

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Following the command write, a read cycle from specific address retrives device information. Please note that output data of upper byte (DQ in word mode (16 bit) read. Refer ...

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MBM29DL16XTD/BD • HiddenROM Protect Command There are two methods to protect the HiddenROM area. One is to write the sector group protect setup command(60h), set the sector address in the HiddenROM area and (A group protect command(60h) during the HiddenROM ...

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Status Embedded Program Algorithm Embedded Erase Algorithm Erase Suspend Read (Erase Suspended Sector) Erase Erase Suspend Read Suspended (Non-Erase Suspended Sector) In Progress Mode Erase Suspend Program (Non-Erase Suspended Sector) Program Suspend Read Program (Program Suspended Sector) Suspended Program Suspend ...

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MBM29DL16XTD/BD The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm or sector erase time-out. (See “Hardware Sequence Flags Table”.) See “(6) AC Waveforms for Data Polling during Embedded Algorithm Operations” in ■TIMING DIAGRAM for ...

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DQ 3 Sector Erase Timer After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial ...

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MBM29DL16XTD/BD tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. (Refer to “(4) Toggle Bit Algorithm” in “■ FLOW CHART”.) Mode Program Erase Erase-Suspend Read ...

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Low V Write Inhibit CC To avoid initiation of a write cycle during V than < the command register is disabled and all internal program/erase circuits are disabled. LKO CC LKO Under this ...

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MBM29DL16XTD/BD ■ ABSOLUTE MAXIMUM RATINGS (See WARNING) Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with respect to Ground All pins except A , OE, RESET * Power Supply Voltage OE, and ...

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MAXIMUM OVERSHOOT/MAXIMUM UNDERSOOT +0.6 V –0.5 V –2.0 V Figure 1 Maximum Undershoot Waveform +2.0 V Figure 2 Maximum Overshoot Waveform 1 +14.0 V +13 +0 Note: ...

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MBM29DL16XTD/BD ■ DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current WP/ACC Accelerated Program Current V Active Current Active Current Current (Standby Current (Standby, ...

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AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From ...

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MBM29DL16XTD/BD • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time Data ...

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Parameter RESET High Level Period before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time *1 : ...

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MBM29DL16XTD/BD ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle ■ PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance WP/ACC Pin Capacitance Notes : • Test conditions ...

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TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address High-Z Outputs MBM29DL16XTD/BD WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from ...

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MBM29DL16XTD/BD (2) AC Waveforms for Hardware Reset/Read Operations Address RESET Outputs 52 -70/ Address Stable t ACC High-Z Retired Product　DS05-20874-8E_July 12, 2007 t OH Output Valid ...

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AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL A0h Data Notes: • address of the memory location to be ...

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MBM29DL16XTD/BD (4) AC Waveforms for Alternate CE Controlled Program Operations Address Data Notes: • address of the memory location to be programmed. • data to be programmed at byte address. • ...

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AC Waveforms for Chip/Sector Erase Operations Address 555h GHWL WE t Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) for ...

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MBM29DL16XTD/BD (6) AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). ...

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AC Waveforms for Toggle Bit I during Embedded Algorithm Operations Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). 6 ...

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MBM29DL16XTD/BD (8) Bank-to-bank Read/Write Timing Diagram Read t RC Address BA1 Valid DQ Output Note: This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address corresponding to Bank 1. ...

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RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (11) RESET, RY/BY Timing Diagram WE RESET RY/BY MBM29DL16XTD/BD Rising edge of the last write pulse Entire programming or erase operations t BUSY READY Retired ...

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MBM29DL16XTD/BD (12) Timing Diagram for Word Mode Configuration CE BYTE ELFH (13) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL ...

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AC Waveforms for Sector Group Protection SPAX ...

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MBM29DL16XTD/BD (16) Temporary Sector Group Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY 62 -70/90 t Program or Erase Command Sequence VLHT Unprotection period Retired Product　DS05-20874-8E_July 12, 2007 t VLHT t ...

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Extended Sector Group Protection Timing Diagram VCS t RESET VLHT t t VIDR WC Add Data 60h SPAX : Sector Group Address to be protected ...

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MBM29DL16XTD/BD (18) Accelerated Program Timing Diagram VACCR t VCS V ACC V IH WP/ACC CE WE RY/BY 64 -70/90 t Program Command Sequence VLHT Acceleration period Retired Product　DS05-20874-8E_July 12, 2007 t VLHT t VLHT ...

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FLOW CHART (1) Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes: • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. MBM29DL16XTD/BD Start Write Program Command Sequence (See Below) Data Polling ...

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MBM29DL16XTD/BD (2) Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command): 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Notes: • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 66 -70/90 Start ...

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Data Polling Algorithm rechecked even MBM29DL16XTD/BD Start Read Byte ( Address for programming 7 0 Addr Any of the sector addresses within the ...

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MBM29DL16XTD/BD (4) Toggle Bit Algorithm *1: Read toggle bit twice to determine whether it is toggling. *2: Recheck toggle bit because it may stop toggling -70/90 Start Read Addr ...

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Sector Group Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode MBM29DL16XTD/BD Start Setup Sector Group Addr ...

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MBM29DL16XTD/BD (6) Temporary Sector Group Unprotection Algorithm *1: All protected sector groups are unprotected. *2: All previously protected sector groups are protected once again. 70 -70/90 Start RESET = Perform Erase or Program Operations RESET = V ...

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Extended Sector Group Protection Algorithm Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed MBM29DL16XTD/BD Start RESET = V ID Wait to ...

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MBM29DL16XTD/BD (8) Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 72 -70/90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h ...

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ORDERING INFORMATION Part No. MBM29DL161TD-70PFTN MBM29DL161TD-90PFTN MBM29DL162TD-70PFTN MBM29DL162TD-90PFTN MBM29DL163TD-70PFTN MBM29DL163TD-90PFTN MBM29DL164TD-70PFTN MBM29DL164TD-90PFTN MBM29DL161TD-70PFTR MBM29DL161TD-90PFTR MBM29DL162TD-70PFTR MBM29DL162TD-90PFTR MBM29DL163TD-70PFTR MBM29DL163TD-90PFTR MBM29DL164TD-70PFTR MBM29DL164TD-90PFTR MBM29DL161TD-70PBT MBM29DL161TD-90PBT MBM29DL162TD-70PBT MBM29DL162TD-90PBT MBM29DL163TD-70PBT MBM29DL163TD-90PBT MBM29DL164TD-70PBT MBM29DL164TD-90PBT MBM29DL161BD-70PFTN MBM29DL161BD-90PFTN MBM29DL162BD-70PFTN MBM29DL162BD-90PFTN MBM29DL163BD-70PFTN MBM29DL163BD-90PFTN MBM29DL164BD-70PFTN MBM29DL164BD-90PFTN MBM29DL161BD-70PFTR MBM29DL161BD-90PFTR MBM29DL162BD-70PFTR ...

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MBM29DL16XTD/BD (Continued) MBM29DL16X T E DEVICE NUMBER/DESCRIPTION MBM29DL16X 16Mega-bit (2M × 8-Bit or 1M × 16-Bit) CMOS Flash Memory 3.0 V-only Read, Program, and Erase 74 -70/90 70 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Normal ...

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PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 ± (.787 ± .008) * 18.40 ± (.724 ± .008) "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6-7 C 48-pin plastic TSOP(1) (FPT-48P-M20) LEAD No. 1 INDEX 24 0.10(.004) ...

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MBM29DL16XTD/BD (Continued) 48-ball plastic FBGA (BGA-48P-M13) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48013S-c-3 -70/90 +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 8.00±0.20 4.00(.157) (.315±.008) Dimensions in mm (inches). Note: The values in parentheses ...

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MEMO Retired Product　DS05-20874-8E_July 12, 2007 MBM29DL16XTD/BD -70/90 77 ...

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MBM29DL16XTD/BD MEMO 78 -70/90 Retired Product　DS05-20874-8E_July 12, 2007 ...

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Revision History Revision DS05-20874-8E（July 12, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. MBM29DL16XTD/BD Retired Product　DS05-20874-8E_July 12, 2007 ...

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MBM29DL16XTD/BD FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 ...