MBM30LV0064 Fujitsu Microelectronics, Inc., MBM30LV0064 Datasheet - Page 17

• Manufacturer Part Number: MBM30LV0064
• Description: Flash Memory 64m 8m X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

(Continued)
Notes: 1. AC Test Conditions:
ALE Low to RE Low (Read Cycle)
RE Last Clock Rising Edge to Busy (in Sequential Read)
CE High to Ready (in Case of Interception by CE in Read Mode)
(Note 2)
Device Resetting Time (Read/Program/Erase)
2. The time to go from CE high to Ready depends on the pull-up resister of the R/B pin (see Application
3. In case that toggling CE to high after access to the last address (address 527) in the resister in the read
Notes (6)) toward the end of this document.
mode (1), (2), and (3), the CE high time must be held for 100 ns or more when the delay time of CE with
respect to RE is 0 to 200 ns (see the figure below). When the CE delay time is within 30 ns, the device
is kept in the Ready state and will output no Busy signal.
Input level
Input comparison level
Output data comparison level
Output load
Load capacitance (C
Transition time (t
Operating range
Parameter
T
)
L
)
V
CC
= 2.7 to 3.6 V
50 pF
2.4 V/0.4 V
1.5 V/1.5 V
1.5 V/1.5 V
1TTL
5 ns
V
CC
Symbol
= 3.0 to 3.6 V
t
t
t
t
CRY
AR2
RST
100 pF
RB
MBM30LV0064
Min.
50
—
—
—
Value
5/10/500
50 + tr
(R/B)
Max.
100
—
Unit
ns
ns
ns
s
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