MBM30LV0064 Fujitsu Microelectronics, Inc., MBM30LV0064 Datasheet - Page 7

• Manufacturer Part Number: MBM30LV0064
• Description: Flash Memory 64m 8m X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

*1: H: V
*2: WP should be biased to CMOS high or CMOS low for standby.
*3: When SE is high, spare area is deselected.
*4: If 50h command is input and read/program operation is executed only for spare area, SE must be low at the
*: H: V
Read
Mode
During Read (Busy)
Sequential Read & Data Output
Program/
Erase
Mode
Data Input
During Program (Busy)
During Erase (Busy)
Write Protect
Stand-by
Output Select
Output Deselect
Standby
DEVICE BUS OPERATIONS
command/address input.
Operation
IH
IH
, L: V
, L: V
Command Input
Address Input (3 clock)
Command Input
Address Input (2 or 3 clock)
IL
IL
, X: V
, X: V
Mode
IH
IH
or V
or V
IL
IL
CLE
L
L
X
Table 3
ALE
X
L
L
Table 2
CLE
H
H
L
L
L
L
L
X
X
X
X
Read Mode Operation Status *
CE
H
L
L
Operation Table
ALE
H
H
X
X
X
X
L
L
L
L
L
WE
H
H
X
CE
X
X
X
H
L
L
L
L
L
L
L
*1
RE
H
X
L
WE
H
H
X
X
X
X
High Impedance
High Impedance
Data Output
I/O0 to I/O7
MBM30LV0064
RE
H
H
H
H
H
H
X
X
X
X
0 V/V
L/H
L/H
L/H
L/H
X
X
X
X
SE
X
X
Power Supply
*4
*4
*4
*4
CC *2
*3
*3
*3
*3
Standby
Active
Active
0 V/V
WP
H
H
H
H
H
X
X
X
X
L
CC *2
7