HZM6.2Z4MWA Renesas Electronics Corporation., HZM6.2Z4MWA Datasheet
HZM6.2Z4MWA
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HZM6.2Z4MWA Summary of contents
Page 1
... Silicon Planar Zener Diode for Surge Absorb Features • HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF Max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly. ...
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... HZM6.2Z4MWA Absolute Maximum Ratings Item Power dissipation Junction temperature Storage temperature Note: Two device total, See Fig.2. Electrical Characteristics * Item Symbol Zener voltage Reverse current Capacitance C Dynamic resistance ESD-Capability * — Notes: 1. Per one device. ...
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... HZM6.2Z4MWA Main Characteristics –2 10 –3 10 –4 10 –5 10 – Zener Voltage V Fig.1 Zener current vs. Zener voltage 1.0 –2 10 Rev.1.00, Oct 01, 2004, page 250 200 150 100 (V) Z Fig.2 Power Dissipation vs. Ambient Temperature –1 10 1.0 Time t (ms) Fig ...
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... HZM6.2Z4MWA Package Dimensions + 0.10 3–0.4 – 0.05 (0.95) (0.95) 1.9 ± 0.2 Rev.1.00, Oct 01, 2004, page 0.3 2.8 – 0.1 Package Code JEDEC JEITA Mass (reference value January, 2003 Unit 0.10 0.16 – 0.06 0 – 0.1 MPAK — Conforms 0.011 g ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...