FX6KMJ-2 Renesas Electronics Corporation., FX6KMJ-2 Datasheet - Page 4

• Manufacturer Part Number: FX6KMJ-2
• Description: High-speed Switching Use Pch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6KMJ-2
Rev.1.00, Aug.20.2004, page 4 of 6
–20
–16
–12
–10
10
10
– 8
– 4
– 8
– 6
– 4
– 2
0
2
7
5
4
3
2
7
5
4
3
2
0
3
2
0
–3 –5–7
0
Transfer Characteristics (Typical)
Tch = 25°C
I
Tc = 25°C
V
Pulse Test
D
Drain-Source Voltage (Typical)
Drain-Source Voltage V
Gate-Source Voltage V
DS
= – 6A
–10
– 2
Gate-Source Voltage vs.
= –10V
Gate Charge (Typical)
4
Gate Charge Qg (nC)
0
–2
Capacitance vs.
–3 –5–7
– 4
8
–10
1
– 6
12
–2
–3 –5–7
Tch = 25°C
f = 1MHz
V
Crss
Ciss
GS
Coss
GS
– 8
DS
– 80V
16
– 50V
–10
= 0V
V
(V)
– 20V
(V)
DS
2
–2 –3
=
–10
20
10
–20
–16
–12
10
10
10
10
– 8
– 4
–1
0
7
5
7
5
4
3
2
7
5
4
3
2
5
3
2
7
5
3
2
1
0
2
1
–10
–7
0
Switching Characteristics (Typical)
Tc = 25°C
–10
V
Pulse Test
Forward Transfer Admittance vs.
–1
GS
Source-Drain Voltage V
Source-Drain Diode Forward
–1
– 0.4
–2 –3
Characteristics (Typical)
= 0V
Drain Current (Typical)
–2 –3 –4 –5 –7
Drain Current I
Drain Current I
75°C
– 0.8
–5 –7
125°C
–10
Tch = 25°C
V
V
R
td(off)
td(on)
t f
–10
GS
DD
tr
GEN
0
–1.2
0
= –10V
= – 50V
–2 –3
D
D
= R
V
Pulse Test
125°C
–2 –3 –4 –5 –7
(A)
(A)
DS
GS
–1.6
SD
75°C
= – 5V
Tc =
= 50Ω
–5 –7
25°C
(V)
–2.0
–10
1