IS61LV256AL Integrated Silicon Solution, Inc., IS61LV256AL Datasheet - Page 3
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IS61LV256AL
Manufacturer Part Number
IS61LV256AL
Description
32k X 8 Low Voltage Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
1.IS61LV256AL.pdf
(13 pages)
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DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
10/23/06
IS61LV256AL
OPERATING RANGE
Note: 1. If operated at 12ns, V
Symbol Parameter
V
V
V
V
I
I
V
Range
Commercial
Industrial
LO
LI
OH
IL
IH
OL
IH
IL
(min.) = –0.3V (DC); V
(max.) = V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
+ 0.5V (DC); V
Ambient Temperature
–40°C to +85°C
IL
0°C to +70°C
(min.) = –2.0V (pulse width ≤ 2.0 ns).
DD
range is 3.3V + 10%.
IH
(1)
(max.) = V
Test Conditions
V
V
GND ≤ V
GND ≤ V
DD
DD
DD
= Min., I
= Min., I
+ 2.0V (pulse width ≤ 2.0 ns).
OUT
IN
(Over Operating Range)
≤ V
Speed (ns)
OH
OL
≤ V
DD
= 4.0 mA
= –2.0 mA
DD
10
10
, Outputs Disabled
3.3V, +10%, –5%
3.3V + 10%, –5%
V
Com.
Com.
DD
Ind.
Ind.
(1)
Min.
–0.3
2.4
2.2
–1
–2
–1
–2
—
V
DD
Max.
0.4
0.8
—
1
2
1
2
ISSI
+ 0.3
Unit
µA
µA
V
V
V
V
®
3