FW905 Sanyo Semiconductor Corporation, FW905 Datasheet

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FW905

Manufacturer Part Number
FW905
Description
N-channel And P-channel Silicon Mosfets
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : EN8754
FW905
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : W905
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW 10 s)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage
contained in a single package.
High-density mounting.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P T
yfs
I D
P D
SANYO Semiconductors
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS = 8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =7A
I D =7A, V GS =4V
I D =3A, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
Duty cycle 1%
Mounted on a ceramic board
(1500mm
Mounted on a ceramic board
(1500mm
FW905
2
2
0.8mm)1unit, PW 10s
0.8mm), PW 10s
Conditions
Conditions
80906 / 22406PA MS IM TB-00002087
DATA SHEET
N-channel
min
0.5
20
9
--55 to +150
20
10
52
7
Ratings
150
2.3
2.5
typ
1530
230
215
15
18
20
P-channel
Continued on next page.
max
- -20
- -52
10
--6
1.3
24
33
10
1
No.8754-1/6
Unit
Unit
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A

Related parts for FW905

FW905 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FW905 SANYO Semiconductors Symbol Conditions ...

Page 2

... Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm 7005-003 0.43 5.0 1.27 0.595 FW905 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =10V =4V =7A ...

Page 3

... D.C. 1% P.G [Nch] --6 --5 --4 --3 --2 --1 0 0.25 0.3 0.35 0.4 IT05892 [Nch] --8 --7 --6 --5 --4 --3 --2 --1 0 1.2 1.4 1.6 1.8 IT05893 --10V -- =1. OUT G FW905 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage --10V 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Gate-to-Source Voltage [Pch] --0.8 --0.9 --1.0 IT09896 [Pch] --1.6 --1.8 --2.0 IT09897 No.8754-3/6 ...

Page 4

... Drain Current = 1 0 0.01 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage FW905 [Nch] 100 Ta= -- --0 --1 IT05894 [Nch 125 150 ...

Page 5

... Operation in this area 5 is limited (on 0 Ta= Single pulse 2 2 Mounted on a ceramic board (1500mm 0. 0.01 0.1 1.0 Drain-to-Source Voltage FW905 [Nch] 1000 V DD =10V =4. 100 --0.01 IT05898 [Nch] 5 ...

Page 6

... Ambient Temperature Note on usage : Since the FW905 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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