STT818B_07 ST Microelectronics, Inc., STT818B_07 Datasheet - Page 4

• Manufacturer Part Number: STT818B_07
• Description: High gain low Voltage PNP Power Transistor
• Manufacturer: ST Microelectronics, Inc.

Electrical characteristics
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Electrical characteristics
(T
Table 4.
1. Pulse duration = 300 µs, duty cycle 1.5 %.
V
V
V
V
case
Symbol
(BR)CEO
BE(ON)
CE(sat)
BE(sat)
h
I
I
CBO
EBO
FE
= 25°C unless otherwise specified)
(1)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Collector-cut-off current
(I
Collector-emitter
breakdown voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Base-emitter voltage
E
C
B
=0)
= 0)
= 0)
Parameter
V
V
V
I
I
I
I
I
I
I
I
I
I
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
= -10 mA
= -0.5 A
= -1.2 A
= -2 A
= -0.5 A
= -1.2A
= -2A
= -0.5 A
= -2.5 A
= -0.5 A
= -30 V
= -30 V
= -5 V
Test conditions
_
_
_
_
_
I
I
I
I
T
B
B
B
B
V
V
V
I
I
C
B
B
CE
CE
CE
= -12 mA
= -20 mA
= -12 mA
= -20 mA
= 125°C
= -5 mA
= -5 mA
= -1 V
= -3 V
= -2 V
Min.
100
100
-30
-0.075
-0.21
-0.74
-0.71
Typ.
-0.15
Max.
-0.1
-0.1
-0.3
-0.5
-1.1
-1.1
-1.2
-1.1
-20
STT818B
Unit
µA
µA
µA
V
V
V
V
V
V
V
V