STP4NC60A ST Microelectronics, Inc., STP4NC60A Datasheet - Page 3

• Manufacturer Part Number: STP4NC60A
• Description: N-channel 600V 1.8 Ohm 4.2A TO-220/TO-220FP/I2PAK Powermesh ii MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area for TO-220/I
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
2
PAK
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 4.2A, V
= 4A, di/dt = 100A/µs,
= 300V, I
= 480V, I
= 10V
= 100V, T
= 480V, I
Test Conditions
Test Conditions
Test Conditions
,V
V
GS
GS
GS
D
D
D
j
= 150°C
= 2A
= 4A,
= 4A,
= 0
= 10V
= 10V
Safe Operating Area for TO-220FP
STP4NC60A/FP/STB4NC60A-1
Min.
Min.
Min.
Typ.
16.5
Typ.
Typ.
600
2.5
2.7
14
14
15
19
24
9
9
Max.
Max.
Max.
21.1
16.8
4.2
1.6
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
3/10