IRGPS4067DPBF International Rectifier, IRGPS4067DPBF Datasheet - Page 2

• Manufacturer Part Number: IRGPS4067DPBF
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: International Rectifier

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IRGPS4067DPbF
Notes:

‚
ƒ
„
…
†
Electrical Characteristics @ T
V
V
V
V
V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(B R)CES
GE (th)
Maximum limits are based on statistical sample size characterization.
2
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is 120A. Note that current limitations arising from heating of the device leads may occur.
CC

/T J
is measured at T
/T
= 80% (V
J
Collector-to-Emitter Brea kd ow n Volta g e
T emperature Coeff. of B reakdow n Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 66μH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 4.7tested in production I
(BR)CES
safely.
Min.
Min.
600
4.0
FULL SQUARE
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
12130
5750
3430
9180
7740
4390
7750
Typ.
0.27
1.70
2.15
2.20
Typ.
240
190
230
550
225
500
130
-17
1.0
2.3
2.4
1.9
77
70
90
80
70
40
80
75
55
36
—
—
—
—
LM
400A.
Max.
12350
Max.
7990
4360
2.05
±400
150
360
105
135
100
125
220
6.5
3.0
60
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—
mV/°C V
Units
Units
V/°C
mA
nC
μA
nA
μJ
ns
μJ
ns
pF
μs
μJ
ns
V
V
V
S
V
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
R
E nergy los s es include tail & diode revers e recovery
I
R
I
R
E nergy los s es include tail & diode revers e recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 4.7, V
V
Rg = 4.7, V
T
V
V
C
C
C
F
F
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
J
GE
CC
J
CC
CC
J
CC
GE
G
G
G
G
= 120A
= 120A, T
= 120A, V
= 120A, V
= 120A, V
= 120A
= 120A, V
= 120A, V
= 120A, V
= 120A, V
=4.7, L=66μH, T
= 175°C
= 175°C, I
= 175°C
= 4.7, L = 66μH, T
= 4.7, L = 66μH, TJ = 25°C
= 4.7, L = 66μH
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 400V
= 0V
= 30V
= 480V, Vp =600V
= 400V, Vp =600V
= 400V, I
= 15V, Rg = 4.7, L =100μH
Conditions
GE
GE
, I
, I
C
C
C
C
CE
CE
C
J
GE
GE
GE
CC
CC
CC
CC
= 100μA
= 4.0mA (25°C-175°C)
C
GE
GE
= 5.6mA
= 5.6mA (25°C - 175°C)
F
= 175°C
= 120A
= 600V
= 600V, T
= 480A
= 120A
= 15V, T
= 15V, T
= 15V, T
= 400V, V
= 400V, V
= 400V, V
= 400V, V
= +20V to 0V
= +15V to 0V
Conditions
J
= 175°C
J
J
J
J
J
= 25°C
= 150°C
= 175°C
GE
= 25°C
GE
GE
GE
= 175°C
=15V
= 15V
= 15V
= 15V
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