IRGPS4067DPBF International Rectifier, IRGPS4067DPBF Datasheet - Page 5

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IRGPS4067DPBF

Manufacturer Part Number
IRGPS4067DPBF
Description
INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer
International Rectifier
Datasheet
www.DataSheet.co.kr
www.irf.com
T
J
= 175°C; L = 66μH; V
T
J
= 175°C; L = 66μH; V
30000
25000
20000
15000
10000
30000
25000
20000
15000
10000
5000
5000
25
20
15
10
5
0
0
0
Fig. 16 - Typ. Energy Loss vs. R
5
0
0
Fig. 12 - Typical V
Fig. 14 - Typ. Energy Loss vs. I
E ON
E OFF
50
20
T
CE
J
10
CE
= 175°C
100
= 400V, I
40
= 400V, R
V GE (V)
Rg ()
I C (A)
CE
150
60
E ON
vs. V
CE
I CE = 6.0A
I CE = 120A
I CE = 195A
15
G
= 4.7; V
= 120A; V
E OFF
GE
200
80
C
G
GE
250
100
GE
20
= 15V
= 15V
T
J
T
= 175°C; L = 66μH; V
J
= 175°C; L = 66μH; V
10000
1000
1000
350
300
250
200
150
100
100
100
Fig. 13 - Typ. Transfer Characteristics
10
50
10
Fig. 17 - Typ. Switching Time vs. R
0
Fig. 15 - Typ. Switching Time vs. I
0
3
0
td OFF
td ON
T J = -40°C
T J = 25°C
T J = 175°C
td ON
4
t F
t R
V
td OFF
t F
V GE, Gate-to-Emitter Voltage (V)
CE
20
50
5
IRGPS4067DPbF
= 50V; tp = 10μs
CE
CE
6
100
= 400V, I
= 400V, R
40
R G (  )
I C (A)
7
8
150
60
CE
G
9
= 4.7; V
= 120A; V
200
10
80
C
11
t R
G
GE
100
250
GE
= 15V
12
= 15V
5
Datasheet pdf - http://www.DataSheet4U.net/

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