IRGPS4067DPBF International Rectifier, IRGPS4067DPBF Datasheet - Page 7

• Manufacturer Part Number: IRGPS4067DPBF
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: International Rectifier

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100000
10000
1000
100
0.0001
Fig. 24 - Typ. Capacitance vs. V
0.0001
0.001
0.001
0.01
0
0.01
0.1
0.1
1E-006
1
1E-006
1
V
20
GE
D = 0.50
Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
D = 0.50
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
= 0V; f = 1MHz
0.05
0.02
0.10
0.01
0.20
0.10
0.05
0.20
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
40
SINGLE PULSE
( THERMAL RESPONSE )
V CE (V)
1E-005
1E-005
60
Cies
Cres
Coes
80
CE
0.0001
100
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.0001


J
J


J

J

1
Ci= iRi
1
Ci= iRi


1
Ci
1
Ci
0.001
iRi
iRi
R
R
1
R
1
R
1
1


2
2
R

0.001
R

2
2
2
R
2
R
16
14
12
10
2
Fig. 25 - Typical Gate Charge vs. V
2
8
6
4
2
0
0
R

R

3
3
3
R
0.01
3

R

3
3
3
3
I
CE
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

50
Q G , Total Gate Charge (nC)

R
4
R
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

4

R
4
4
= 120A; L = 100μH
R
4
4
IRGPS4067DPbF
4


C
C
V CES = 300V
V CES = 400V


Ri (°C/W) i (sec)
Ri (°C/W) i (sec)
0.01
100
0.00441
0.22783
0.27340
0.12494
0.04418
0.01606
0.06827
0.06827
0.1
150
0.000008
0.000836
0.004982
0.026498
0.000167
0.000167
0.000873
0.007828
200
0.1
GE
1
250
7
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