S1M1V045 Epson Electronics America, Inc., S1M1V045 Datasheet - Page 4

• Manufacturer Part Number: S1M1V045
• Description: Full CMOS Asynchronous SRAM
• Manufacturer: Epson Electronics America, Inc.

S1M1V045B0J7
4
*1 Test Conditions
*Word-mode only
*Word-mode only
1. Input pulse level : 0.3V to 0.8V
2. t
3. Input and output timing reference levels :1/2V
4. Output load : C
AC Electrical Characteristics
Read Cycle
Write Cycle
Write cycle time
Chip select time (CS1)
Chip select time (CS2)
Address enable time
Address setup time
Write pulse width
LB, UB select time *
Address hold time
Data setup time
Data hold time
WE output floating
WE output set time
Read cycle time
Address access time
CS1 access time
CS2 access time
OE access time
LB, UB access time*
CS1 output set time
CS2 output set time
CS1 output floating
CS2 output floating
LB, UB output set time*
LB, UB output floating*
OE output set time
OE output floating
Output hold time
r
= t
f
I/O
Parameter
= 5ns
Parameter
L
C
=100pF (Includes Jig Capacitance)
L
1TTL
DD
(2.4V to 3.0V)
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WC
CW1
CW2
AW
AS
WP
BW
WR
DW
DH
WHZ
OW
RC
ACC
ACS1
ACS2
OE
AB
CLZ1
CLZ2
CHZ1
CHZ2
BLZ
BHZ
OLZ
OHZ
OH
DD
(2.4V to 3.0V)
Conditions
Conditions
Test
Test
1
1
1
1
1
1
1
1
1
1
2
2
1
1
1
1
1
1
2
2
2
2
2
2
2
2
1
*2 Test Conditions
1. Input pulse level : 0.3V to 0.8V
2. t
3. Input timing reference levels :1/2V
4. Output timing reference levels : 200mV (The level changed from stable
5. Output load :C
output voltage level)
r
= t
f
= 5ns
I/O
Min.
Min.
70
60
60
60
55
60
35
70
0
0
0
–
5
–
–
–
–
–
5
5
–
–
0
–
0
–
5
L
= 5pF (Includes Jig Capacitance)
S1M1V045B0J7
S1M1V045B0J7
C
2.4 to 3.0V
2.4 to 3.0V
L
1TTL
DD
DD
(2.4V to 3.0V)
Max.
Max.
(V
(V
30
70
70
70
40
40
30
30
30
30
(2.4V to 3.0V)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
SS
SS
= 0V, Ta = –40 to 85 C)
= 0V, Ta = –40 to 85 C)
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev.1.0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns