BTA10-400B ST Microelectronics, Inc., BTA10-400B Datasheet - Page 2
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BTA10-400B
Manufacturer Part Number
BTA10-400B
Description
-
Manufacturer
ST Microelectronics, Inc.
Datasheet
1.BTA10-400B.pdf
(5 pages)
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THERMAL RESISTANCES
* For either polarity of electrode A 2 voltage with reference to electrode A 1 .
BTA10 B/C / BTB10 B/C
GATE CHARACTERISTICS (maximum values)
P G (AV) = 1W
ELECTRICAL CHARACTERISTICS
2/5
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360 conduction angle
(dV/dt)c *
Symbol
dV/dt *
Symbol
Rth (j-a)
V TM *
I DRM
I RRM
V GD
V GT
I H *
I GT
tgt
I L
V D =12V
V D =12V
V D =V DRM R L =3.3k
V D =V DRM
dI G /dt = 3A/ s
I G =1.2 I GT
I T = 500mA gate open
I TM = 14A tp= 380 s
V DRM Rated
V RRM Rated
Linear slope up to V D =67%V DRM
gate open
(dI/dt)c = 4.4A/ms
Junction to ambient
( F= 50 Hz)
P GM = 10W (tp = 20 s)
(DC) R L =33
(DC) R L =33
I G = 500mA
Test Conditions
Parameter
I GM = 4A (tp = 20 s)
Tj=110 C
Tj=110 C
Tj=110 C
Tj=110 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Quadrant
I-II-III-IV
I-II-III-IV
I-II-III-IV
I-III-IV
V GM = 16V (tp = 20 s).
I-II-III
BTA
BTB
BTA
BTB
IV
II
MAX
MAX
MAX
MAX
MAX
MAX
MAX
TYP
TYP
MIN
MIN
MIN
Value
100
250
3.9
3.1
2.9
2.3
50
40
70
50
10
60
B
Suffix
0.01
1.5
0.2
1.5
0.5
2
100
25
50
20
35
25
C
5
Unit
V/ s
V/ s
Unit
mA
mA
mA
mA
C/W
C/W
C/W
V
V
V
s