ACS257D Intersil Corporation, ACS257D Datasheet - Page 2

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ACS257D

Manufacturer Part Number
ACS257D
Description
Radiation Hardened Quad 2-input Multiplexer With Three-state Outputs
Manufacturer
Intersil Corporation
Datasheet
Die Characteristics
DIE DIMENSIONS:
METALLIZATION: Al
SUBSTRATE POTENTIAL:
Metallization Mask Layout
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Size: 2390 m x 2390 m (94 mils x 94 mils)
Thickness: 525 m 25 m (20.6 mils 1 mil)
Bond Pad: 110 m x 110 m (4.3 x 4.3 mils)
Metal 1 Thickness: 0.7 m 0.1 m
Metal 2 Thickness: 1.0 m 0.1 m
Unbiased Insulator
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2I
2I
1I
1Y
1
0
1
2Y
1I
0
ACS257MS
GND
ACS257MS
S
2
PASSIVATION
SPECIAL INSTRUCTIONS:
ADDITIONAL INFORMATION:
V
3Y
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30 m 0.15 m
Bond V
Worst Case Density: <2.0 x 10
Transistor Count: 212
CC
CC
OE
3I
1
First
4I
4I
4Y
3I
5
0
1
0
A/cm
2

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