Si7450DP Vishay Intertechnology, Si7450DP Datasheet - Page 3

• Manufacturer Part Number: Si7450DP
• Description: N-channel 200-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71432
S-31728—Rev. C, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.15
0.10
0.05
0.00
20
16
12
50
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 4.0 A
0.2
On-Resistance vs. Drain Current
= 100 V
8
V
SD
15
Q
T
g
J
- Source-to-Drain Voltage (V)
= 150_C
V
I
0.4
D
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
16
= 6 V
0.6
30
24
0.8
V
T
45
GS
J
= 25_C
32
= 10 V
1.0
1.2
40
60
2500
2000
1500
1000
0.25
0.20
0.15
0.10
0.05
0.00
500
2.5
2.0
1.5
1.0
0.5
0.0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 4.0 A
C
= 10 V
rss
40
2
T
V
V
0
J
DS
GS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
80
4
Vishay Siliconix
C
50
C
oss
iss
120
I
D
6
75
= 4.0 A
Si7450DP
100
160
www.vishay.com
8
125
200
150
10
3