Si7882DP Vishay Intertechnology, Si7882DP Datasheet - Page 2

• Manufacturer Part Number: Si7882DP
• Description: N-channel Reduced Qg, Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Si7882DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0
b
Parameter
V
1
V
a
a
GS
DS
Output Characteristics
= 10 thru 2.5 V
a
- Drain-to-Source Voltage (V)
2
a
a
2 V
3
Symbol
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
= 25_C UNLESS OTHERWISE NOTED)
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
1.5 V
5
V
V
I
D
DS
DS
^ 1 A, V
I
F
= 9.6 V, V
= 6 V, V
V
V
V
V
V
V
= 2.7 A, di/dt = 100 A/ms
DS
I
DS
Test Condition
DS
V
DS
GS
S
V
V
GS
DS
DD
DD
= 2.7 A, V
w 5 V, V
= V
= 0 V, V
= 9.6 V, V
= 4.5 V, I
= 2.5 V, I
= 6 V, I
= 6 V, R
= 6 V, R
GEN
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
GS
GS
D
GS
D
= 250 mA
L
L
GS
D
= 17 A
= "8 V
= 14 A
= 6 W
= 6 W
= 4.5 V
= 17 A
= 0 V
= 0 V
J
D
G
= 70_C
= 17 A
50
40
30
20
10
= 6 W
0
0.0
0.5
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
0.6
0.8
40
25_C
1.0
T
C
= 125_C
0.0045
0.0065
Typ
0.70
4.6
3.5
80
21
28
32
82
35
60
S-31727—Rev. D, 18-Aug-03
Document Number: 71858
1.5
0.0055
"100
Max
0.008
123
1.4
1.1
3.5
30
42
48
53
90
-55_C
1
5
2.0
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
2.5