Si7882DP Vishay Intertechnology, Si7882DP Datasheet - Page 3

• Manufacturer Part Number: Si7882DP
• Description: N-channel Reduced Qg, Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71858
S-31727—Rev. D, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
0.012
0.009
0.006
0.003
0.000
6
5
4
3
2
1
0
50
10
1
0.00
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 17 A
5
0.2
10
= 6 V
V
Q
SD
T
g
J
= 150_C
- Total Gate Charge (nC)
- Source-to-Drain Voltage (V)
I
D
10
V
0.4
GS
- Drain Current (A)
Gate Charge
20
= 2.5 V
15
0.6
30
20
0.8
V
GS
T
40
J
= 4.5 V
25
= 25_C
1.0
50
30
1.2
0.040
0.032
0.024
0.016
0.008
0.000
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
-25
V
I
D
GS
C
= 17 A
2
V
rss
1
V
GS
= 4.5 V
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
4
Capacitance
25
C
2
oss
Vishay Siliconix
50
6
C
iss
3
75
I
Si7882DP
D
8
= 17 A
100
www.vishay.com
4
10
125
150
5
12
3