Si7973DP Vishay Intertechnology, Si7973DP Datasheet - Page 2

• Manufacturer Part Number: Si7973DP
• Description: Dual P-channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7973DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
25
20
15
10
5
0
0
b
Parameter
1
V
a
a
DS
V
GS
Output Characteristics
− Drain-to-Source Voltage (V)
a
= 5 thru 2 V
2
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
4
SD
t
t
rr
fs
gs
gd
r
f
g
g
1.5 V
1 V
5
New Product
V
DS
I
V
D
DS
^ −1 A, V
= −6 V, V
I
V
V
F
V
= −12 V, V
V
V
V
GS
V
DS
GS
= −2.9 A, di/dt = 100 A/ms
GS
I
DS
DS
V
S
V
V
DS
Test Condition
DD
DD
DS
= −4.5 V, I
v −5 V, V
= −2.9 A, V
= −2.5 V, I
= V
= −1.8 V, I
= −6 V, I
= −12 V, V
= −6 V, R
= −6 V, R
= 0 V, V
GS
GEN
f = 1 MHz
GS
GS
= −4.5 V, I
, I
= −4.5 V, R
D
= 0 V, T
D
GS
D
GS
D
= −600 mA
D
GS
= −12.8 A
GS
L
L
= −11.4 A
= −12.8 A
= −4.2 A
= −4.5 V
= 6 W
= 6 W
= "8 V
= 0 V
= 0 V
D
J
= −12.8 A
= 85_C
G
30
25
20
15
10
5
0
= 6 W
0.00
0.25
V
GS
0.50
−0.40
Min
Transfer Characteristics
−30
− Gate-to-Source Voltage (V)
T
C
0.75
25_C
= 125_C
0.012
0.015
0.019
Typ
−0.8
15.4
1.00
360
260
166
8.1
35
55
40
72
8
S-32129—Rev. A, 27-Oct-03
Document Number: 72428
1.25
−55_C
"100
Max
0.015
0.019
0.024
−1.0
−1.2
110
540
390
250
−1
−5
80
60
1.50
1.75
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
W
2.00